Patent US4768000A successfully refreshed from Google Patents.
US4768000A
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Monolithic double balanced single sideband modulator
Assignee: Texas Instruments Inc
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Filing: 1987-04-13
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Granted: 1988-08-30
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Expires: 2007-04-13
Abstract
Abstract A modulator comprising two differential FET pairs, each pair having a current generator feeding the source electrodes thereof, a voltage source being coupled between the drain electrodes of each pair and the current generator. A low frequency signal is applied to one of the gate electrodes of each pair, ninety degrees out of phase with each other and a high frequency signal is applied to the other of the gate electrodes of each pair, ninety degrees out of phase with each other. The result is that all of the generated frequencies except one side band is cancelled at the drain electrodes of the pairs. The particular side band recovered is determined by the direction of the ninety degree phase shift between the signals.
Inventors
- 👤 Anthony M. Pavio, Jr.
- 👤 Scott D. Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:01
CPC Classifications
H; H03; H03C; H03C1/00; H03C1/52; H03C1/60; H03C2200/00; H03C2200/0037; H03C2200/0058; H03C2200/007
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
204 words
A modulator, comprising: (a) a first pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to a first predetermined reference voltage source and a current generator coupled between both source electrodes of said first pair and a second predetermined reference voltage source lower than said first voltage source, (b) a second pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to said first predetermined reference voltage source and a current generator coupled between both source electrodes of said second pair and said second predetermined reference voltage source, (c) means coupled to one of said gate electrodes of said first pair and one of said gate electrodes of said second pair to provide a signal of a first frequency to each of said one gate electrodes having a ninety degree phase difference, (d) means coupled to the other of said gate electrodes of said first pair and the other of said gate electrodes of said second pair to provide a signal of a second frequency to each of said other gate electrodes having a ninety degree phase difference, and (e) output means coupled to said first source of voltage.
Claim 2
Dependent Claim
204 words
A modulator, comprising: (a) a first pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to a first predetermined reference voltage source and a current generator coupled between both source electrodes of said first pair and a second predetermined reference voltage source lower than said first voltage source, (b) a second pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to said first predetermined reference voltage source and a current generator coupled between both source electrodes of said second pair and said second predetermined reference voltage source, (c) means coupled to one of said gate electrodes of said first pair and one of said gate electrodes of said second pair to provide a signal of a first frequency to each of said one gate electrodes having a ninety degree phase difference, (d) means coupled to the other of said gate electrodes of said first pair and the other of said gate electrodes of said second pair to provide a signal of a second frequency to each of said other gate electrodes having a ninety degree phase difference, and (e) output means coupled to said first source of voltage.
Claim 3
Dependent Claim
25 words
The modulator of claim 1 wherein said first and second pairs of semiconductor devices and said output means are disposed on a single semiconductor chip.
Claim 4
Dependent Claim
13 words
The modulator of claim 1 wherein said semiconductor devices are group III-V FETs.
Claim 5
Dependent Claim
13 words
The modulator of claim 2 wherein said semiconductor devices are group III-V FETs.
Claim 6
Dependent Claim
14 words
The modulator of claim 3 wherein said semiconductor devices are formed of gallium arsenide.
Claim 7
Dependent Claim
14 words
The modulator of claim 4 wherein said semiconductor devices are formed of gallium arsenide.
Claim 8
Independent Claim
187 words
A method of generating a single sideband signal, comprising the steps of: (a) providing a first pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to a first predetermined reference voltage source and a current generator coupled between both source electrodes of said first pair and a second predetermined reference voltage source lower than said first voltage source, (b) providing a second pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to said first predetermined reference voltage source and a current generator coupled between both source electrodes of said second pair and said second predetermined reference voltage source, (c) providing signals of a first frequency to one of said gate electrodes of said first pair and to one of said gate electrodes of said second pair, said signals applied to said one gate electrodes having a ninety degree phase difference, (d) providing signals of a second frequency to each of the other gate electrodes having a ninety degree phase difference, and (e) obtaining an output from said first source of voltage.
Claim 9
Independent Claim
187 words
A method of generating a single sideband signal, comprising the steps of: (a) providing a first pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to a first predetermined reference voltage source and a current generator coupled between both source electrodes of said first pair and a second predetermined reference voltage source lower than said first voltage source, (b) providing a second pair of semiconductor devices, each device having gate, source and drain electrodes, each said drain being coupled to said first predetermined reference voltage source and a current generator coupled between both source electrodes of said second pair and said second predetermined reference voltage source, (c) providing signals of a first frequency to one of said gate electrodes of said first pair and to one of said gate electrodes of said second pair, said signals applied to said one gate electrodes having a ninety degree phase difference, (d) providing signals of a second frequency to each of the other gate electrodes having a ninety degree phase difference, and (e) obtaining an output from said first source of voltage.
Claim 10
Dependent Claim
25 words
The method of claim 7 wherein said first and second pairs of semiconductor devices and said output means are disposed on a single semiconductor chip.
Claim 11
Dependent Claim
13 words
The method of claim 7 wherein said semiconductor devices are group III-V FETs.
Claim 12
Dependent Claim
13 words
The method of claim 8 wherein said semiconductor devices are group III-V FETs.
Claim 13
Dependent Claim
14 words
The method of claim 9 wherein said semiconductor devices are formed of gallium arsenide.
Claim 14
Dependent Claim
14 words
The method of claim 10 wherein said semiconductor devices are formed of gallium arsenide.
Claim 15
Dependent Claim
21 words
The modulator of claim 1 wherein each of said devices includes a second gate electrode coupled to said second voltage source.
Claim 16
Dependent Claim
23 words
The modulator of claim 1 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 17
Dependent Claim
23 words
The modulator of claim 4 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 18
Dependent Claim
23 words
The modulator of claim 6 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 19
Dependent Claim
23 words
The method of claim 7 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 20
Dependent Claim
23 words
The method of claim 10 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 21
Dependent Claim
23 words
The method of claim 12 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
Claim 22
Dependent Claim
23 words
The modulator of claim 13 wherein said first frequency is a relatively low frequency and said second frequency is a relatively high frequency.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-30 | 1992-02-29 | 1992-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-30 | 1996-02-29 | 1996-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-30 | 2000-02-29 | 2000-08-30 | $7700.00 | Window Closed / Lapsed |