High speed control circuit for power field effect transistors

Claim 2

A high speed control circuit, comprising: a transformer having a primary winding coupled to receive an input signal and a secondary winding which produces at least one control signal based on said input signal; energy storage means, coupled to said secondary winding of said transformer, for storing energy during at least one inactive phase of said at least one control signal; electronic network means, coupled to said secondary of said transformer and to said energy storage means, for receiving said control signals, and producing output signals which are powered substantially only by energy stored in said energy storage means, said output signals being produced during an active phase of said at least one control signal, and being isolated from said secondary of said transformer during said active phases of said at least one control signal; and at least one transistor, having a gate terminal coupled to receive said at least one control signal.

Claim 3

A circuit for high speed control of at least one field effect power transistor which has a control gate, comprising: a transformer with a primary winding for receiving an input signal, and a secondary winding for transmitting a control signal based on said input signal to said control gate of the field effect power transistor, said control signal having alternately assuming a first voltage level and a second voltage level opposite in sense to the first voltage level; energy storage means, coupled to said secondary winding, for storing energy required for controlling said field effect power transistor during a first time when the control signal is at its first voltage level; transmission means, coupled to said secondary winding and fed only by said energy storage means, for transferring energy stored in the energy storage means to the control gate of said field effect power transistor only during a second time when said control signal is set at its second voltage level; and isolating means coupled between said secondary winding and said energy storage means, for inhibiting the transfer of energy from said secondary winding to said energy storage means and to said transferring means during said second time when the control signal is set at its second voltage level.

Claim 4

A circuit for high speed control of at least one field effect power transistor which has a control gate, comprising: a transformer with a primary winding for receiving an input signal, and a secondary winding for transmitting a control signal based on said input signal to said control gate of the field effect power transistor, said control signal having alternately assuming a first voltage level and a second voltage level opposite in sense to the first voltage level; energy storage means, coupled to said secondary winding, for storing energy required for controlling said field effect power transistor during a first time when the control signal is at its first voltage level; transmission means, coupled to said secondary winding and fed only by said energy storage means, for transferring energy stored in the energy storage means to the control gate of said field effect power transistor only during a second time when said control signal is set at its second voltage level; and isolating means coupled between said secondary winding and said energy storage means, for inhibiting the transfer of energy from said secondary winding to said energy storage means and to said transferring means during said second time when the control signal is set at its second voltage level.

Claim 5

The circuit as claimed in claim 2 wherein said energy storage means comprises at least one capacitor connected in parallel to said secondary winding of the transformer through said isolating means.

Claim 6

The control circuit as claimed in claim 3, wherein said transmission means is formed by at least one field effect transistor, having drain and source electrodes respectively coupled to terminals of said capacitor, the source electrode being also connected to said control gate of said power transistor, and said field effect transistor having a gate electrode connected to said secondary winding, for receiving said control signal.

Claim 7

The control circuit as claimed in claim 2 wherein there are at least two field effect transistors serially connected and wherein said transmission means is formed by a "push pull" type stage formed by two complementary field effect transistors connected in series and having source electrodes which are connected together and to at least one gate of the field effect power transistor, and said energy storage means includes a plurality of energy storage elements, one coupled to each of said complementary field effect transistor.

Claim 8

The control circuit as claimed in claim 2 wherein said isolating means comprise at least one diode serially connected between said secondary winding and said energy storage means.