US4766570A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Hitachi Ltd
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Filing: 1986-06-13
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Granted: 1988-08-23
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Expires: 2006-06-13
Abstract
Abstract A semiconductor memory device is provided with a memory portion, a logical operation circuit which receives the data signal read out from such memory portion and the input data signal to form data to be offered to such memory portion, and a gate circuit. In case a data input operation is required which eliminates the logical operation, the input data signal is fed not via the logical operation circuit, but via the gate circuit directly to the memory portion. The semiconductor memory device constructed as above permits a high speed operation and is suited for use as the memory for image processing.
Inventors
- 👤 Yasunori Yamaguchi
- 👤 Jun Miyake
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:58
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; H; H04; H04N; H04N5/00; H04N5/76; H04N5/907; G11C7/00; G11C7/10; G11C7/1006
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
118 words
A semiconductor memory device comprising; a memory portion for storing data, wherein said memory portion includes means to allow data stored therein to be rewritten; an internal circuit coupled to said memory portion to provide data to said memory portion, wherein said internal circuit has a plurality of operation modes which are respectively selected in accordance with a function signal so that the data to be provided to said memory portion in each operation mode is determined by said function signal; an address input terminal; and a function setting circuit coupled to receive an input signal from said address input terminal, said function setting circuit including means to form said function signal in accordance with said input signal.
Claim 2
Dependent Claim
118 words
A semiconductor memory device comprising; a memory portion for storing data, wherein said memory portion includes means to allow data stored therein to be rewritten; an internal circuit coupled to said memory portion to provide data to said memory portion, wherein said internal circuit has a plurality of operation modes which are respectively selected in accordance with a function signal so that the data to be provided to said memory portion in each operation mode is determined by said function signal; an address input terminal; and a function setting circuit coupled to receive an input signal from said address input terminal, said function setting circuit including means to form said function signal in accordance with said input signal.
Claim 3
Dependent Claim
88 words
A semiconductor memory device as defined in claim 1, wherein said device comprises a timing control circuit which receives a chip selection signal and a first control signal, wherein said timing control circuit is coupled to said function setting circuit and includes means for forming a first timing signal in accordance with said chip selection signal and said first control signal, said first timing signal being provided to said function setting circuit to control the operation of said function setting circuit with respect to receiving said input signal.
Claim 4
Dependent Claim
34 words
A semiconductor memory device as defined in claim 2, wherein said function setting circuit has a hold means for maintaining the level of said function signal until said first timing signal is again generated.
Claim 5
Dependent Claim
40 words
A semiconductor memory device as defined in claim 2, further comprising an address buffer having an input terminal which is coupled to said address input terminal, the input signal being fed via said address buffer to said function setting circuit.
Claim 6
Dependent Claim
74 words
A semiconductor memory device as defined in claim 4, wherein said address buffer comprises an address buffer for receiving a row address signal and a column address signal which are fed to said address input terminal in accordance with a time sharing system and further wherein said chip selection signal comprises a row address strobe signal, and said first control signal is composed of a column address strobe signal and a write enable signal.
Claim 7
Dependent Claim
19 words
A semiconductor memory device as defined in claim 5, wherein said memory portion comprises a dynamic random access memory.
Claim 8
Dependent Claim
141 words
A semiconductor memory device as defined in claim 6, further comprising a refresh control circuit for forming at least a refresh address signal for designating a dynamic memory cell to be refreshed from said memory portion and wherein said timing control circuit makes a refresh operation effective by said refresh control circuit in response to the column address strobe signal being set to a first level when said row address strobe signal is set to a second level and wherein the first timing signal is formed so that said function setting circuit may take in the input signal transferred from said address input terminal in response to the status wherein, said row address strobe signal and the column address strobe signal are respectively set to the second and first levels, while the write enable signal is set to the first level.
Claim 9
Dependent Claim
90 words
A semiconductor memory device as defined in claim 7, wherein said internal circuit comprises an operation circuit having a plurality of operation modes which are respectively selected in accordance with the function signal fed from said function setting circuit, wherein said operation circuit includes means for executing different logical operations in different operation modes in accordance with the input data and the data to be read out from said memory portion and further includes means for providing data based on the execution of said logical operation to said memory portion.
Claim 10
Dependent Claim
123 words
A semiconductor memory device comprising: a memory portion for storing data to be rewritten, wherein said memory portion includes means to allow data stored therein to be rewritten; an operation circuit coupled to receive input data applied to an input terminal and output data read out from said memory portion, wherein said operation circuit includes means for performing a logical operation based on said input and output data to form operation data to be written into said memory portion; a function setting circuit; and a bypass circuit the operation of which is controlled by a control signal fed from said function setting circuit to feed said input data directly to said memory portion in accordance with a predetermined level of said control signal.
Claim 11
Dependent Claim
123 words
A semiconductor memory device comprising: a memory portion for storing data to be rewritten, wherein said memory portion includes means to allow data stored therein to be rewritten; an operation circuit coupled to receive input data applied to an input terminal and output data read out from said memory portion, wherein said operation circuit includes means for performing a logical operation based on said input and output data to form operation data to be written into said memory portion; a function setting circuit; and a bypass circuit the operation of which is controlled by a control signal fed from said function setting circuit to feed said input data directly to said memory portion in accordance with a predetermined level of said control signal.
Claim 12
Dependent Claim
43 words
A semiconductor memory device as defined in claim 9, wherein said operation circuit has a plurality of operation modes and said function setting circuit outputs operation control signals for selecting predetermined ones of said operation modes in accordance with said operation control signals.
Claim 13
Dependent Claim
91 words
A semiconductor memory device as defined in claim 10, further comprising a timing control circuit the operation of which is controlled by a plurality of external control signals, wherein when said plurality of external control signals are set to a predetermined state a timing control signal is formed by said timing control circuit for setting said function setting circuit to preform a predetermined input operation, said function setting circuit having a hold means for maintaining an operation control signal and said control signal for said bypass circuit after said input operation.
Claim 14
Dependent Claim
34 words
A semiconductor memory device as defined in claim 11, further comprising an address input terminal and a coupling means for coupling said address input terminal and the input terminal of said function setting circuit.
Claim 15
Dependent Claim
18 words
A semiconductor memory device as defined in claim 12, wherein said coupling means comprises a column address buffer.
References Cited (Backward Citations)
US4660180A
Cited
US4680737A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |