Apparatus for ion implantation

Claim 3

An apparatus as defined in claim 1 wherein the suppressor electrode is in the form of a hollow cylinder adapted to be disposed concentrically with the deceleration tube.

Claim 4

An apparatus as defined in claim 2 wherein the hollow cylinder is 20 to 30 mm in length.

Claim 5

An apparatus as defined in claim 1 wherein a constant voltage is applied to the suppressor electrode by the suppressor power supply.

Claim 6

An apparatus as defined in claim 1 wherein an optional voltage is applied to the suppressor electrode by the suppressor power supply.

Claim 7

An apparatus as defined in claim 1 wherein the ion extraction power supply applies a voltage of from 25 to 80 kV to the ion extraction electrode, the deceleration power supply applies a voltage of from 3 to 25 kV to the deceleration tube, and the suppressor power supply applies a voltage of from 0.3 to 2 kV to the suppressor electrode.

Claim 8

An apparatus as defined in claim 1 wherein the deceleration tube comprises insulators and electrodes connected together in a multiplicity of stages.

Claim 9

An apparatus as defined in claim 1 wherein the ion implantation unit comprises a vacuum container, a disk disposed inside the container for placing thereon the article to be ion-implanted, and a secondary electron suppressor electrode opposed to the disk.

Claim 10

An ion implantation apparatus for implanting ions in an article, said apparatus comprising: (a) means for supplying an ion beam to said ion implantation apparatus; (b) means for selecting predetermined ions from said ion beam, said selecting means comprising a mass separator for receiving said ion beam and for selectively passing said predetermined ions, said selecting means being connected to said ion beam supplying means, said predetermined ions having a given mass; (c) means for decelerating said predetermined ions, said decelerating means comprising an inlet, a deceleration tube for receiving said predetermined ions from said selecting means and for decelerating said predetermined ions, and a deceleration power supply for supplying power to said deceleration tube, said decelerating means being connected to said selecting means; (d) means for implanting said decelerated predetermined ions in said article, said implanting means being connected to said decelerating means; and (e) first suppressing means for suppressing passage of secondary electrons of said ion beam from said selecting means to said decelerating means, said first suppressing means positioned substantially adjacent to said inlet of said decelerating means.

Claim 11

An ion implantation apparatus for implanting ions in an article, said apparatus comprising: (a) means for supplying an ion beam to said ion implantation apparatus; (b) means for selecting predetermined ions from said ion beam, said selecting means comprising a mass separator for receiving said ion beam and for selectively passing said predetermined ions, said selecting means being connected to said ion beam supplying means, said predetermined ions having a given mass; (c) means for decelerating said predetermined ions, said decelerating means comprising an inlet, a deceleration tube for receiving said predetermined ions from said selecting means and for decelerating said predetermined ions, and a deceleration power supply for supplying power to said deceleration tube, said decelerating means being connected to said selecting means; (d) means for implanting said decelerated predetermined ions in said article, said implanting means being connected to said decelerating means; and (e) first suppressing means for suppressing passage of secondary electrons of said ion beam from said selecting means to said decelerating means, said first suppressing means positioned substantially adjacent to said inlet of said decelerating means.

Claim 12

The ion implantation apparatus according to claim 9, wherein said means for supplying an ion beam to said ion implantation apparatus comprises: (a) an ion source for producing ions; (b) an ion extraction electrode for forming said ion beam from ions produced by said ion source; and (c) an ion source power supply for supplying power to said ion source.

Claim 13

The ion implantation apparatus according to claim 9 wherein said mass separator is angled.

Claim 14

The ion implantation apparatus according to claim 9 wherein said deceleration tube comprises a plurality of stages, each stage comprising at least one hollow cylindrical insulator and at least one electrode.

Claim 15

The ion implantation apparatus according to claim 9 wherein said implanting means comprises: (a) a vacuum container having an inlet through which said decelerated predetermined ions pass; (b) a disk for receiving said article to be implanted; (c) second suppressing means positioned between said disk and said inlet to prevent secondary electrons from bouncing off of said article; and (d) second suppressing means power supply for supplying power to said second suppressing means.

Claim 16

The ion implanting apparatus according to claim 13 wherein said first and second suppressing means each comprise a suppressor electrode comprising a hollow cylinder adapted to be positioned substantially concentric to said deceleration tube.

Claim 17

The ion implanting apparatus according to claim 14 wherein said hollow cylinder of said first suppressing means has a length between 20 mm and 30 mm.

Claim 18

An apparatus in accordance with claim 1, wherein said mass separator comprises means for producing a magnetic field to deflect ions having a predetermined mass.

Claim 19

An apparatus in accordance with claim 9, wherein said mass separator comprises means for producing a magnetic field to deflect ions having a predetermined mass.