Method of manufacturing a charge-coupled device

Claim 1

A method of manufacturing a semiconductor device comprising a number of first electrodes which consist of practically parallel electrode strips located on an electrically insulating layer and are separated from each other by grooves with insulated walls, these grooves being filled with a conductive material constituting intermediate second electrodes which are coplanar with the first electrodes, characterized in that the first electrodes are covered by a first insulating layer and are contacted via first contact windows which each overlap in part at least one second electrode, and in that the second electrodes are covered by a second insulating layer which is thinner than said first insulating layer and are contacted via second contact windows which are provided therein and are bounded by the insulating layer on the adjoining first electrodes, each second electrode exhibiting at least one interruption between its second contact window and the first contact windows on the adjoining first electrodes overlapping it, and also between these first contact windows, further characterized in that a number of parallel strip-shaped first electrodes separated from each other by grooves are provided on an electrically insulating layer, in that these first electrodes and the groove walls are covered with an insulating layer, in that subsequently a conductive layer is deposited on the whole, which is then etched until parts of this conductive layer are left only within the grooves, these parts forming intermediate second electrodes, in that a number of interruptions are formed in each second electrode by etching and the second electrodes are provided with an insulating layer, which is thinner than the insulating layer on the first electrodes, in that via a mask on each of the second electrodes a self-aligned second contact window is formed by etching away the said thinner insulating layer, and in that via another mask a first contact window overlapping at least one of the adjacent second electrodes is formed on each first electrode by etching away the insulating layer present on the first electrodes, the contact windows being arranged so that each second electrode between every two overlaps and between an overlap and the second contact window exhibits one of said interruptions.

Claim 2

A method of manufacturing a semiconductor device comprising a number of first electrodes which consist of practically parallel electrode strips located on an electrically insulating layer and are separated from each other by grooves with insulated walls, these grooves being filled with a conductive material constituting intermediate second electrodes which are coplanar with the first electrodes, characterized in that the first electrodes are covered by a first insulating layer and are contacted via first contact windows which each overlap in part at least one second electrode, and in that the second electrodes are covered by a second insulating layer which is thinner than said first insulating layer and are contacted via second contact windows which are provided therein and are bounded by the insulating layer on the adjoining first electrodes, each second electrode exhibiting at least one interruption between its second contact window and the first contact windows on the adjoining first electrodes overlapping it, and also between these first contact windows, further characterized in that a number of parallel strip-shaped first electrodes separated from each other by grooves are provided on an electrically insulating layer, in that these first electrodes and the groove walls are covered with an insulating layer, in that subsequently a conductive layer is deposited on the whole, which is then etched until parts of this conductive layer are left only within the grooves, these parts forming intermediate second electrodes, in that a number of interruptions are formed in each second electrode by etching and the second electrodes are provided with an insulating layer, which is thinner than the insulating layer on the first electrodes, in that via a mask on each of the second electrodes a self-aligned second contact window is formed by etching away the said thinner insulating layer, and in that via another mask a first contact window overlapping at least one of the adjacent second electrodes is formed on each first electrode by etching away the insulating layer present on the first electrodes, the contact windows being arranged so that each second electrode between every two overlaps and between an overlap and the second contact window exhibits one of said interruptions.

Claim 5

A method as claimed in claims 1 to 3, characterized in that the contact windows are formed via mask openings which are provided in a masking layer consisting of a first layer comprising silicon nitride and of a second layer of silicon oxide.