US4766007A
Expired / Lapsed
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Process for forming deposited film
Assignee: Canon Inc
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Filing: 1987-10-01
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Granted: 1988-08-23
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Expires: 2007-10-01
Abstract
Abstract A process for forming deposited film of an element or a compound on a substrate provided in a deposition chamber while applying an energy selected from the group consisting of thermal energy, electrodischarging energy and optical energy, characterized by cooling the electrode or both electrode and inner wall of a deposition chamber, which are opposed to the substrate.
Inventors
- 👤 Takashi Kurokawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:45
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5093
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
75 words
A process for forming a deposited film on a substrate, comprising the steps of: providing the substrate and silicon and hydrogen atoms in a deposition chamber; forming a deposited film on the substrate which film comprises amorphous silicon containing hydrogen atoms by applying electro-discharging energy to a stainless steel electrode opposed to the substrate; and cooling said electrode to maintain such electrode at a temperature of 150° C. or lower while performing said forming step.
Claim 2
Dependent Claim
75 words
A process for forming a deposited film on a substrate, comprising the steps of: providing the substrate and silicon and hydrogen atoms in a deposition chamber; forming a deposited film on the substrate which film comprises amorphous silicon containing hydrogen atoms by applying electro-discharging energy to a stainless steel electrode opposed to the substrate; and cooling said electrode to maintain such electrode at a temperature of 150° C. or lower while performing said forming step.
Claim 3
Dependent Claim
37 words
A process for forming a deposited film according to claim 1 wherein the inner wall of the deposition chamber which is opposed to the substrate is also cooled to 150° C. or lower in said cooling step.
Claim 4
Dependent Claim
26 words
A process for forming a deposited film according to claim 1 wherein said cooling step takes place with a liquid coolant flowing to a cooling chamber.
Claim 5
Dependent Claim
26 words
A process for forming a deposited film according to claim 3 wherein said cooling step takes place with the liquid coolant flowing to a cooling coil.
Claim 6
Dependent Claim
16 words
A process for forming a deposited film according to claim 1 wherein the substrate is cylindrical.
Claim 7
Dependent Claim
20 words
The process of any of claims 1-5, wherein an inner wall of said deposition chamber provides said stainless steel electrode.
Claim 8
Dependent Claim
19 words
The process of claim 1, wherein said silicon and hydrogen atoms are in the form of SiH 4 molecules.
Claim 9
Dependent Claim
14 words
The process of claim 7, wherein said deposition chamber further contains H 2 molecules.
Claim 10
Dependent Claim
36 words
The process of either of claims 7 or 8, wherein said deposition chamber further contains a gaseous material containing elements selected from the group consisting of C, N, O, Group III elements and Group V elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |