Patent US4761790A successfully refreshed from Google Patents.
US4761790A
Expired / Lapsed
US
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Optical semiconductor device
Assignee: Sharp Corp
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Filing: 1985-12-02
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Granted: 1988-08-02
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Expires: 2005-12-02
Abstract
Abstract An optical semiconductor device comprising a GaAs substrate and a lamination of molecular layer units formed on said GaAs substrate, said molecular layer units being composed of binary compound semiconductors of InP, GaP and AlP.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kohsei Takahashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:19
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34326; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10H20/811; H10H20/812; H01S5/342
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
An optical semiconductor device comprising a GaAs substrate, a lamination of molecular layer units including an optically active MQW layer formed between two cladding layers on said GaAs substrate, a GaAs cap layer formed on said lamination, and contacts formed on said substrate and said cap layer, said molecular layer units being composed of binary compound semiconductors of InP, GaP and AlP, wherein the ratio of the number of the InP molecular layers to the total number of the GaP molecular layers and the AlP molecular layers in each of said molecular layer units constituting said active MQW layer is in the range of 1:1 to 12:13, and each InP layer in said molecular layer units is composed of a continuous lamination of 20 or less molecular layers.
Claim 2
Dependent Claim
128 words
An optical semiconductor device comprising a GaAs substrate, a lamination of molecular layer units including an optically active MQW layer formed between two cladding layers on said GaAs substrate, a GaAs cap layer formed on said lamination, and contacts formed on said substrate and said cap layer, said molecular layer units being composed of binary compound semiconductors of InP, GaP and AlP, wherein the ratio of the number of the InP molecular layers to the total number of the GaP molecular layers and the AlP molecular layers in each of said molecular layer units constituting said active MQW layer is in the range of 1:1 to 12:13, and each InP layer in said molecular layer units is composed of a continuous lamination of 20 or less molecular layers.
References Cited (Backward Citations)
US4205329A
Cited
EP0124924A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-02 | 1992-02-01 | 1992-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-02 | 1996-02-01 | 1996-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-02 | 2000-02-01 | 2000-08-02 | $7700.00 | Window Closed / Lapsed |