Method of manufacturing avalanche photo diode

Claim 1

A method for the manufacture of an avalanche photo-diode, comprising the steps of: forming in sequence, on a semiconductor substrate of a first conductivity type, at least a first semiconductor layer of the first conductivity type and serving as a light absorbing layer, a second semiconductor layer of the first conductivity type having a larger forbidden band width and forming a hetero boundary with said first layer, and a dummy layer of the first conductivity type; forming, by diffusion, a ring-shaped region of the second conductivity type to extend through the dummy layer down to the second semiconductor layer, the ring-shaped region being used as a guard ring; removing the dummy layer; forming, by diffusion, a light receiving region of the second conductivity type constituting a pn junction in the second semiconductor layer inside the ring-shaped region, making the distances from said hetero boundary between the first semiconductor layer and the second semiconductor layer to the diffusion front of the guard ring and to the pn junction serving as the light receiving region substantially equal to each other; and providing electrodes on the substrate and the guard ring.

Claim 2

A method for the manufacture of an avalanche photo-diode, comprising the steps of: forming in sequence, on a semiconductor substrate of a first conductivity type, at least a first semiconductor layer of the first conductivity type and serving as a light absorbing layer, a second semiconductor layer of the first conductivity type having a larger forbidden band width and forming a hetero boundary with said first layer, and a dummy layer of the first conductivity type; forming, by diffusion, a ring-shaped region of the second conductivity type to extend through the dummy layer down to the second semiconductor layer, the ring-shaped region being used as a guard ring; removing the dummy layer; forming, by diffusion, a light receiving region of the second conductivity type constituting a pn junction in the second semiconductor layer inside the ring-shaped region, making the distances from said hetero boundary between the first semiconductor layer and the second semiconductor layer to the diffusion front of the guard ring and to the pn junction serving as the light receiving region substantially equal to each other; and providing electrodes on the substrate and the guard ring.

Claim 3

A method of manufacturing an avalanche photo diode, comprising the sequential steps of forming on a semiconductor substrate a first semiconductor layer of the first conductivity type serving as a light absorbing layer, forming on said first semiconductor layer a second semiconductor layer of the first conductivity type having a larger forbidden band width and constituting a hetero boundary with said first layer; forming on said second semiconductor layer a region of a second conductivity type in which a pn junction located centrally of the region serves as a light receiving region, and providing a metal electrode and a guard ring around said light receiving region, the distances from said hetero boundary between the first semiconductor layer and the second semiconductor layer to the diffusion front of the guard ring and to the pn junction serving as the light receiving region being substantially equal to each other.

Claim 4

A method of manufacturing an avalanche photo diode, comprising the sequential steps of forming on a semiconductor substrate a first semiconductor layer of the first conductivity type serving as a light absorbing layer, forming on said first semiconductor layer a second semiconductor layer of the first conductivity type having a larger forbidden band width and constituting a hetero boundary with said first layer; forming on said second semiconductor layer a region of a second conductivity type in which a pn junction located centrally of the region serves as a light receiving region, and providing a metal electrode and a guard ring around said light receiving region, the distances from said hetero boundary between the first semiconductor layer and the second semiconductor layer to the diffusion front of the guard ring and to the pn junction serving as the light receiving region being substantially equal to each other.