US4125415A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making high voltage semiconductor structure
Assignee: Motorola Solutions Inc
•
Filing: 1977-05-09
•
Granted: 1978-11-14
•
Expires: 1997-05-09
Abstract
Abstract A semiconductor p-n junction structure with improved blocking voltage capability. The improvement results from the addition of a doped layer with limited total doping to the main p-n junction. Such a structure is suitable for diodes, transistors, thyristors and the like.
Inventors
- 👤 Lowell E. Clark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
120 words
A method for forming a high voltage semiconductor device, comprising: providing a high resistivity substrate of one conductivity type and having first and second major surfaces; forming a first region of a second opposite conductivity type extending into said substrate from a portion of said first major surface; forming a first region of said one conductivity type wholly within said first region and extending from said first major surface; forming a second region of said second conductivity type with a total doping less than 10 12 impurity atoms per square centimeter surrounding and abutting said first region of second conductivity type and extending further into said substrate from said first surface than said first region of said one conductivity type.
Claim 2
Independent Claim
120 words
A method for forming a high voltage semiconductor device, comprising: providing a high resistivity substrate of one conductivity type and having first and second major surfaces; forming a first region of a second opposite conductivity type extending into said substrate from a portion of said first major surface; forming a first region of said one conductivity type wholly within said first region and extending from said first major surface; forming a second region of said second conductivity type with a total doping less than 10 12 impurity atoms per square centimeter surrounding and abutting said first region of second conductivity type and extending further into said substrate from said first surface than said first region of said one conductivity type.
Claim 3
Dependent Claim
34 words
The method of claim 1, further including separating said substrate into a plurality of separate devices having said second region of said second conductivity type extending to the lateral boundaries of said separate device.
Claim 4
Dependent Claim
28 words
The method of claim 1, wherein said second region of said second conductivity type is formed by introducing conductivity-determining impurities through essentially all of said first major surface.
Claim 5
Dependent Claim
39 words
The method of claim 1, further including forming a second region of said one conductivity type by introducing conductivity-determining impurities through said first major surface into a location surrounding but spaced from said first region of second conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-13 | 1982-05-15 | 1982-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-13 | 1986-05-15 | 1986-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-13 | 1990-05-15 | 1990-11-14 | $7700.00 | Window Closed / Lapsed |