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US4760556A
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Nonvolatile semiconductor memory device
Assignee: Mitsubishi Electric Corp
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Filing: 1986-09-25
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Granted: 1988-07-26
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Expires: 2006-09-25
Abstract
Abstract Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
Inventors
- 👤 Mikio Deguchi
- 👤 Kazuyasu Fujishima
- 👤 Yasushi Terada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:26
CPC Classifications
G; G11; G11C; G11C14/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
313 words
A nonvolatile semiconductor memory device including a plurality of memory cells and functioning as a random access memory when a power source connected thereto is turned on and functioning as a nonvolatile memory when said power source is turned off, each of said memory cells comprising one variable threshold voltage transistor having a function of storing and maintaining electric charge, the threshold voltage being changed according to the amount of the stored electric charge, and one capacitor, said nonvolatile semiconductor memory device comprising first drive means for driving each of said memory cell so that said capacitor of each said memory cell stores data according to the amount of the stored electric charge when said power source is turned on, and second drive means for driving each said memory cell so that said variable threshold voltage transistor of each said memory cell stores data in a nonvolatile manner according to the level of said threshold voltage when said power source is turned off, said first drive means comprises a row decoder, a plurality of word lines extending from said row decoder, a column decoder, and a plurality of bit lines extending from said column decoder, said second drive means comprises control signal providing means for providing a control signal to make each of said memory cells perform nonvolatile storage, and a plurality of control signal lines for transmitting said control signal to each of said memory cells, said memory cells are arrayed at respective points of intersection between said word lines and said bit lines, the gate of each said variable threshold voltage transistor is connected to one of said work lines, the source thereof is connected to one of said bit lines and the drain thereof is connected to one electrode of said capacitor associated thereto, and the other electrode of said capacitor is connected to one of said control signal lines.
Claim 2
Dependent Claim
313 words
A nonvolatile semiconductor memory device including a plurality of memory cells and functioning as a random access memory when a power source connected thereto is turned on and functioning as a nonvolatile memory when said power source is turned off, each of said memory cells comprising one variable threshold voltage transistor having a function of storing and maintaining electric charge, the threshold voltage being changed according to the amount of the stored electric charge, and one capacitor, said nonvolatile semiconductor memory device comprising first drive means for driving each of said memory cell so that said capacitor of each said memory cell stores data according to the amount of the stored electric charge when said power source is turned on, and second drive means for driving each said memory cell so that said variable threshold voltage transistor of each said memory cell stores data in a nonvolatile manner according to the level of said threshold voltage when said power source is turned off, said first drive means comprises a row decoder, a plurality of word lines extending from said row decoder, a column decoder, and a plurality of bit lines extending from said column decoder, said second drive means comprises control signal providing means for providing a control signal to make each of said memory cells perform nonvolatile storage, and a plurality of control signal lines for transmitting said control signal to each of said memory cells, said memory cells are arrayed at respective points of intersection between said word lines and said bit lines, the gate of each said variable threshold voltage transistor is connected to one of said work lines, the source thereof is connected to one of said bit lines and the drain thereof is connected to one electrode of said capacitor associated thereto, and the other electrode of said capacitor is connected to one of said control signal lines.
Claim 3
Dependent Claim
74 words
A nonvolatile semiconductor memory device in accordance with claim 1, wherein said row decoder selects any of said plurality of word lines to open the associated ones of said variable threshold voltage transistors connected to said selected word line, and said column decoder selects any of said plurality of bit lines to write or read data in or from said eapacitor through the opened variable threshold voltage transistors connected to said selected bit line.
Claim 4
Dependent Claim
57 words
A nonvolatile semiconductor memory device in accordance with claim 2, wherein said control signal providing means provides a control signal to each said memory cell through said control signal lines so, that the electric charge stored in said capacitor of each said memory cell is stored in said variable threshold voltage transistor of each said memory cell.
Claim 5
Dependent Claim
48 words
A nonvolatile semiconductor memory device in accordance with claim 3, wherein said control signal providing means provides said control signal in response to an external signal, or detects the turning off of said power source and provides said control signal before said power source is completely turned off.
Claim 6
Dependent Claim
80 words
A nonvolatile semiconductor memory device in accordance with claim 4, wherein for reproduction of the data stored in a nonvolatile manner in said variable threshold voltage transistors, a voltage is applied to said word lines to cause only the variable threshold voltage transistors having a low threshold voltage to be turned on and the variable threshold voltage transistors having a high threshold voltage to be turned off and said capacitors of said memory cells are recharged through said bit lines.
Claim 7
Dependent Claim
25 words
A nonvolatile semiconductor memory device in accordance with claim 1, wherein each said variable threshold voltage transistor is a MOS transistor having a floating gate.
Claim 8
Dependent Claim
51 words
A nonvolatile semiconductor memory device in accordance with claim 6, wherein said MOS transistor includes an oxide film formed between the semiconductor substrate thereof and said floating gate, and said oxide film is made thinner in a portion extending on a difusion region assigned to said drain than the other portion.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-26 | 1992-01-25 | 1992-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-26 | 1996-01-25 | 1996-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-26 | 2000-01-25 | 2000-07-26 | $7700.00 | Window Closed / Lapsed |