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US4760437A Expired / Lapsed US ⏱️ 0.0 years remaining

Neural networks

Assignee: Nokia Bell Labs
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Filing: 1986-01-03
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Granted: 1988-07-26
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Expires: 2006-01-03
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Abstract

Abstract Neural network type information processing devices have been proposed. In these devices, a matrix structure is utilized with impedance at the matrix intersection points. It has been found that excellent versatility in design is achieved by utilizing photoconductors at these intersection points and thus affording the possibility of controlling impedance by, in turn, controlling the level of incident light.

Inventors

  • 👤 John S. Denker
  • 👤 Richard E. Howard
  • 👤 Lawrence D. Jackel

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 16:30
CPC Classifications
G; G06; G06N; G06N3/00; G06N3/02; G06N3/06; G06N3/067; G06N3/0675; H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 80 words
A structure suitable for information processing comprising a matrix and active electronic devices interacting with said matrix wherein said matrix comprises a plurality of row electrodes and a plurality of column electrodes, said matrix having intersecting regions that connect row electrodes to column electrodes wherein means are provided such that said information in process during said processing is interacting simultaneously with all said matrix intersections characterized in that at least a portion of said intersecting regions comprise a photoconductive material.
Claim 2
Dependent Claim 80 words
A structure suitable for information processing comprising a matrix and active electronic devices interacting with said matrix wherein said matrix comprises a plurality of row electrodes and a plurality of column electrodes, said matrix having intersecting regions that connect row electrodes to column electrodes wherein means are provided such that said information in process during said processing is interacting simultaneously with all said matrix intersections characterized in that at least a portion of said intersecting regions comprise a photoconductive material.
Claim 3
Dependent Claim 11 words
The structure of claim 1 wherein said photoconductive material comprises silicon.
Claim 4
Dependent Claim 12 words
The structure of claim 2 wherein said photoconductive material comprises hydrogenated silicon.
Claim 5
Dependent Claim 15 words
The structure of claim 2 wherein at least a portion of said electrodes comprises tungsten.
Claim 6
Dependent Claim 15 words
The structure of claim 1 wherein at least a portion of said electrodes comprises tungsten.
Claim 7
Dependent Claim 15 words
The structure of claim 1 wherein the input to said matrix comprises a photoconductive material.
Claim 8
Dependent Claim 23 words
The structure of claim 1 wherein said means comprises an electrical connection introducing the output of said active elements back into said matrix.
Claim 9
Dependent Claim 103 words
A procedure for processing information comprising the steps of introducing said information into a structure comprising a matrix and active electronic devices interacting with said matrix wherein said matrix comprises a plurality of row electrodes and a plurality of column electrodes, said matrix having intersecting regions that connect row electrodes to column electrodes wherein said information in process during said processing interacts simultaneously with all said matrix intersections characterized in that at least a portion of said intersecting regions comprise a photoconductive material and said processing is influenced by causing light to be incident on at least one of said photoconductive intersecting regions.
Claim 10
Dependent Claim 103 words
A procedure for processing information comprising the steps of introducing said information into a structure comprising a matrix and active electronic devices interacting with said matrix wherein said matrix comprises a plurality of row electrodes and a plurality of column electrodes, said matrix having intersecting regions that connect row electrodes to column electrodes wherein said information in process during said processing interacts simultaneously with all said matrix intersections characterized in that at least a portion of said intersecting regions comprise a photoconductive material and said processing is influenced by causing light to be incident on at least one of said photoconductive intersecting regions.
Claim 11
Dependent Claim 11 words
The structure of claim 8 wherein said photoconductive material comprises silicon.
Claim 12
Dependent Claim 12 words
The structure of claim 8 wherein said photoconductive material comprises hydrogenated silicon.
Claim 13
Dependent Claim 15 words
The structure of claim 10 wherein at least a portion of said electrodes comprises tungsten.
Claim 14
Dependent Claim 15 words
The structure of claim 8 wherein at least a portion of said electrodes comprises tungsten.
Claim 15
Dependent Claim 15 words
The structure of claim 8 wherein the input to said matrix comprises a photoconductive material.
Claim 16
Dependent Claim 23 words
The procedure of claim 8 wherein said simultaneous interaction is provided by feeding back the output of said active elements to said matrix.

References Cited (Backward Citations)

US4360821A Cited
US4363963A Cited
US4589003A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-07-26 1992-01-25 1992-07-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-07-26 1996-01-25 1996-07-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-07-26 2000-01-25 2000-07-26 $7700.00 Window Closed / Lapsed

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