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US4758984A
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Semiconductor memory device including read only memory element for storing fixed information
Assignee: Fujitsu Ltd
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Filing: 1986-12-15
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Granted: 1988-07-19
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Expires: 2006-12-15
Abstract
Abstract A semiconductor memory device including a substrate having one conductivity type; read only memory element formed in the substrate for storing fixed information, the element having a control gate, a floating gate, a source region, and a drain region, both of the regions having an opposite conductivity type to that of the substrate; a first region having the above one conductivity type which surrounds the element; a light shield layer, connected to the source region and the first region, for covering the element; a second region having the opposite conductivity type which is located outside of the first region for taking out the drain region; and a well region having the opposite conductivity type, the well region linking the drain region and the second region, a part of the first region being formed in the well.
Inventors
- 👤 Masanobu Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/18; G11C16/04; G11C16/0408; G11C16/0416; H10D30/681; H10W; H10W42/00; H10W42/20
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
154 words
A semiconductor memory device comprising: a substrate having one conductivity type; a read only memory element formed in said substrate for storing fixed information, said element having a control gate, a floating gate, a source region, and a drain region, both of said regions having an opposite conductivity type to that of said substrate; a first region having said one conductivity type which surrounds said element; a light shield layer, connected to said source region and said first region, for covering said element; a second region having said opposite conductivity type which is located outside of said first region for reading out a state of said drain region; and a well region having said opposite conductivity type, said well region linking said drain region and said second region, a part of said first region being formed in said well, wherein said fixed information is read out through said well region and said second region.
Claim 2
Dependent Claim
154 words
A semiconductor memory device comprising: a substrate having one conductivity type; a read only memory element formed in said substrate for storing fixed information, said element having a control gate, a floating gate, a source region, and a drain region, both of said regions having an opposite conductivity type to that of said substrate; a first region having said one conductivity type which surrounds said element; a light shield layer, connected to said source region and said first region, for covering said element; a second region having said opposite conductivity type which is located outside of said first region for reading out a state of said drain region; and a well region having said opposite conductivity type, said well region linking said drain region and said second region, a part of said first region being formed in said well, wherein said fixed information is read out through said well region and said second region.
Claim 3
Dependent Claim
45 words
A semiconductor memory device according to claim 1, wherein said light shield layer is opened at the portion for taking out said control gate and said control gate is formed bent to match the connection portion of said light shield layer and said first region.
Claim 4
Dependent Claim
26 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is read only memory for storing a malfunctional address.
Claim 5
Dependent Claim
29 words
A semiconductor memory devie according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing hysteresis of a production process.
Claim 6
Dependent Claim
26 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing test data.
Claim 7
Dependent Claim
35 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing information regarding type or product number of the memory device itself.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |