Patent US4758870A successfully refreshed from Google Patents.
US4758870A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1985-03-19
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Granted: 1988-07-19
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Expires: 2005-03-19
Abstract
Abstract A III-V semiconductor device is disclosed, which includes an emitter region, an emitter barrier region having such a barrier height as to substantially restrict a thermionic emission current as compared with a tunneling current and such a barrier width as to permit the tunneling current, a base region containing indium and having higher electron affinity than said emitter region and a collector barrier region having such a barrier height as to substantially prohibit a thermally distributed electron from overflowing and such a barrier width as to substantially prohibit the tunneling current.
Inventors
- 👤 Ichiro Hase
- 👤 Hiroji Kawai
- 👤 Shunji Imanaga
- 👤 Kunio Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:45
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
201 words
A III-V semiconductor device comprising: an emitter region; an emitter barrier region adjacent said emitter region and having such a barrier height so as to substantially restrict thermionic emission current as compared with tunneling current and having a barrier width so as to permit tunneling current; a base region adjacent said emitter barrier region and containing indium and having a higher electron affinity than said emitter region; and said base and emitter regions formed of compounds having the form of In x (Al y Ga 1-y ) 1-x P z As 1-z where 0<x≦1 and 0≦y<1 and x is the base region is selected to be larger than x in the emitter region; a collector barrier region adjacent said base region and having a barrier height so as to substantially prohibit thermally disturbed electrons from overflowing and having a barrier width so as to substantially prohibit said tunneling current and a collector region adjacent said collector barrier region; and, in which said emitter region is GaAs, said emitter barrier region is A x Ga 1-x As, said base region is In y Ga 1-y As, said collector barrier region is A z Ga 1-z As and said collector region is GaAs.
Claim 2
Dependent Claim
201 words
A III-V semiconductor device comprising: an emitter region; an emitter barrier region adjacent said emitter region and having such a barrier height so as to substantially restrict thermionic emission current as compared with tunneling current and having a barrier width so as to permit tunneling current; a base region adjacent said emitter barrier region and containing indium and having a higher electron affinity than said emitter region; and said base and emitter regions formed of compounds having the form of In x (Al y Ga 1-y ) 1-x P z As 1-z where 0<x≦1 and 0≦y<1 and x is the base region is selected to be larger than x in the emitter region; a collector barrier region adjacent said base region and having a barrier height so as to substantially prohibit thermally disturbed electrons from overflowing and having a barrier width so as to substantially prohibit said tunneling current and a collector region adjacent said collector barrier region; and, in which said emitter region is GaAs, said emitter barrier region is A x Ga 1-x As, said base region is In y Ga 1-y As, said collector barrier region is A z Ga 1-z As and said collector region is GaAs.
References Cited (Backward Citations)
US4485391A
Cited
US4608586A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |