Patent US4754314A successfully refreshed from Google Patents.
US4754314A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Split-level CMOS
Assignee: Texas Instruments Inc
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Filing: 1987-01-28
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Granted: 1988-06-28
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Expires: 2007-01-28
Abstract
Abstract A CMOS device wherein the NMOS devices are bulk devices and the PMOS devices are SOI devices. The PMOS devices are formed with their channel regions in a silicon-on-insulator layer, preferably a laterally recrystallized annealed-polysilicon layer over a silicon dioxide layer.
Inventors
- 👤 David B. Scott
- 👤 Satwinder S. Malhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:52
CPC Classifications
H; H10; H10D; H10D88/00; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D88/01
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
130 words
A CMOS integrated circuit, comprising: (a) a single crystal semiconductor substrate; (b) a field oxide defining a moat in said substrate; (c) a continuous layer of semiconductor material contacting said substrate and extending over said field oxide, said layer forming a single crystal extension of said substrate in the regions contiguous thereto and forming a semiconductor device quality portion in the regions contiguous to said field oxide; (d) an insulated gate field effect transistor formed in said extension of said substrate of a predetermined channel conductivity type; (e) an insulated gate field effect transistor formed in said layer over said field oxide of the opposite channel conductivity type; and (f) a source/drain region of one of said transistors being contiguous to a source/drain region of the other of said transistors.
Claim 2
Dependent Claim
130 words
A CMOS integrated circuit, comprising: (a) a single crystal semiconductor substrate; (b) a field oxide defining a moat in said substrate; (c) a continuous layer of semiconductor material contacting said substrate and extending over said field oxide, said layer forming a single crystal extension of said substrate in the regions contiguous thereto and forming a semiconductor device quality portion in the regions contiguous to said field oxide; (d) an insulated gate field effect transistor formed in said extension of said substrate of a predetermined channel conductivity type; (e) an insulated gate field effect transistor formed in said layer over said field oxide of the opposite channel conductivity type; and (f) a source/drain region of one of said transistors being contiguous to a source/drain region of the other of said transistors.
Claim 3
Dependent Claim
25 words
A CMOS circuit as set forth in claim 1 wherein said predetermined channel conductivity type is N-type and said opposite channel conductivity type is P-type.
Claim 4
Dependent Claim
18 words
A CMOS circuit as set forth in claim 1 further including an insulating layer disposed over said transistors.
Claim 5
Dependent Claim
18 words
A CMOS circuit as set forth in claim 2 further including an insulating layer disposed over said transistors.
Claim 6
Dependent Claim
25 words
A CMOS circuit as set forth in claim 3 further including contact means extending through said insulating layer and contacting a said source/drain region thereunder.
Claim 7
Dependent Claim
25 words
A CMOS circuit as set forth in claim 4 further including contact means extending through said insulating layer and contacting a said source/drain region thereunder.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-28 | 1991-12-28 | 1992-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-28 | 1995-12-28 | 1996-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-28 | 1999-12-28 | 2000-06-28 | $7700.00 | Window Closed / Lapsed |