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US4751408A
Expired / Lapsed
US
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Voltage-switching device
Assignee: Thales SA
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Filing: 1986-08-26
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Granted: 1988-06-14
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Expires: 2006-08-26
Abstract
Abstract In a voltage-switching device for such applications as the control of electron tube grids in the field of radar or telecommunications, the total voltages to be switched are distributed at the terminals of a series-connected array of MOS field-effect transistors, thereby ensuring that each individual transistor is not liable to carry voltages in excess of such values which could result in transistor damage or destruction.
Inventors
- 👤 Bernard Rambert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:05
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/10; H03K17/102; H03K17/51; H03K17/56; H03K17/687; H03K17/689; H03K17/691
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
76 words
A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor, a capacitor and a resistor connected in series, and a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
Claim 2
Dependent Claim
76 words
A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor, a capacitor and a resistor connected in series, and a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
Claim 3
Dependent Claim
70 words
A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor and a capacitor, a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
Claim 4
Dependent Claim
70 words
A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor and a capacitor, a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
Claim 5
Dependent Claim
35 words
A voltage-switching element according to claim 1, wherein said voltage-switching element further comprises a diode connected between a lead extending from the capacitor to the series-connected resistor and the first output, said diode being reverse-biased.
Claim 6
Dependent Claim
32 words
A voltage-switching element according to claim 1 wherein said voltage switching element further comprises a low-value resistor placed between said gate of said insulated-gate field-effect (MOSFET) power transistor and said first input.
Claim 7
Dependent Claim
40 words
A voltage-switching element according to claim 1, wherein two oppositely-biased transils, a resistor and a further resistor placed in series with a capacitor are mounted in parallel between the gate and the source of the insulated-gate field-effect (MOSFET) power transistor.
Claim 8
Dependent Claim
26 words
A voltage-switching element according to claim 2, wherein the source and the drain of the insulated-gate field-effect (MOSFET) power transistor are connected through a forwrd-biased diode.
Claim 9
Dependent Claim
36 words
A device according to claim 6, wherein the capacitance of the capacitors follows an arithmetical progression having a common difference equal to the value of the parasitic gate-source capacitances of the insulated-gate field-effect (MOSFET) power transistors.
Claim 10
Dependent Claim
45 words
A voltage-switching element according to claim 6, wherein said voltage-switching element further includes voltage storage means including a diode and a capacitor which can be charged through said diode, said diode being mounted in top-to-tail relation with a Zener diode to form a diode assembly.
Claim 11
Dependent Claim
20 words
A voltage-switching element according to claim 8, wherein a further capacitor is connected to the terminals of the Zener diode.
Claim 12
Dependent Claim
34 words
A voltage switching element according to claim 8, wherein said voltage storage means comprises two diode assemblies of opposite polarity, a Zener diode being employed for storing the negative voltages and the positive voltages.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |