US4747080A
Expired / Lapsed
US
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Semiconductor memory having self correction function
Assignee: NTT Inc
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Filing: 1986-11-03
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Granted: 1988-05-24
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Expires: 2006-11-03
Abstract
Abstract A semiconductor memory having a self correction function, includes: a plurality of memory cells which are divided into a plurality of area groups, store data, and are arranged in a matrix; a plurality of parity cells, associated with the area groups of the memory cells, for forming horizontal and vertical parity codes together with the data in the memory cells of the respective area groups; word lines for simultaneously selecting the plurality of memory cells and the parity cells; bit lines for exchanging data with the memory cells; parity bit lines for exchanging parity bit data with the parity cells; selectors for selecting data of the memory cells and data of the parity cell in the area group to which a memory cell to be checked belongs; means for performing parity check of a plurality of data from the selectors; and means for automatically correcting a bit error using the output from the parity check means. The memory cells divided into the area groups and the parity cells combined therewith are arranged so as not to belong to the same horizontal and vertical arrays of the matrix.
Inventors
- 👤 Junzo Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:24
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G06; G06F; G06F11/00; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/1076; G11C29/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
193 words
A semiconductor memory having a self correction function, comprising: a matrix of cells divided into a plurality of area groups, each of which consists of physically adjacent memory cells and parity cells for forming horizontal and vertical parity codes together with the data in said memory cells, each cell of said area groups being arrayed so as not to belong to the same horizontal and vertical arrays for said horizontal and vertical parity codes; a word line for simultaneously selecting said cells; a plurality of bit lines for exchanging data with said cells; a horizontal selector means associated with each area group for selecting data of the horizontal group to which a memory cell to be checked belongs through said bit lines; a vertical selector means associated with each group for selecting data of the vertical group to which a memory cell to be checked belongs through said bit lines; means coupled to the outputs of said horizontal and vertical selector means for performing a parity check of the output data of said horizontal and vertical selectors; and means for automatically correcting a bit error using the output from said parity check means.
Claim 2
Dependent Claim
193 words
A semiconductor memory having a self correction function, comprising: a matrix of cells divided into a plurality of area groups, each of which consists of physically adjacent memory cells and parity cells for forming horizontal and vertical parity codes together with the data in said memory cells, each cell of said area groups being arrayed so as not to belong to the same horizontal and vertical arrays for said horizontal and vertical parity codes; a word line for simultaneously selecting said cells; a plurality of bit lines for exchanging data with said cells; a horizontal selector means associated with each area group for selecting data of the horizontal group to which a memory cell to be checked belongs through said bit lines; a vertical selector means associated with each group for selecting data of the vertical group to which a memory cell to be checked belongs through said bit lines; means coupled to the outputs of said horizontal and vertical selector means for performing a parity check of the output data of said horizontal and vertical selectors; and means for automatically correcting a bit error using the output from said parity check means.
Claim 3
Dependent Claim
34 words
A semiconductor memory according to claim 1, wherein said parity check means comprises a horizontal array parity check circuit and a vertical array parity check circuit, and said circuits have the same circuit arrangement.
Claim 4
Dependent Claim
16 words
A semiconductor memory according to claim 2, wherein said parity check means comprises one-input parity circuits.
Claim 5
Dependent Claim
16 words
A semiconductor memory according to claim 2, wherein said parity check means comprises exclusive OR gates.
Claim 6
Dependent Claim
26 words
A semiconductor memory according to claim 1, wherein said parity check means comprises parity circuits corresponding to said area groups, and said parity circuits are series-connected.
Claim 7
Dependent Claim
35 words
A semiconductor memory according to claim 1, wherein said parity check means comprises one-input parity circuits corresponding to said area groups, and a plurality of stages of series circuits of said parity circuits are cascade-connected.
Claim 8
Dependent Claim
40 words
A semiconductor memory according to claim 1, wherein each of said parity circuits has a true/bar type circuit arrangement, and a final stage output of the series-connected parity circuits is connected to the series-connected parity circuits at the next stage.
Claim 9
Dependent Claim
22 words
A semiconductor memory according to claim 6, wherein said plurality of stages of series-connected parity circuits are excited by a single clock.
Claim 10
Dependent Claim
78 words
A semiconductor memory according to claim 1, further comprising: a plurality of memory cells, arranged in correspondence with said memory cells and said parity cells, for setting an initial condition; another word line connected to said initial setting memory cells; and means, connected to said another word line, for driving said initial setting memory cells during initial setting, wherein said initial setting memory cells are connected to said bit lines of the corresponding memory cells and parity cells.
Claim 11
Dependent Claim
57 words
A semiconductor memory according to claim 1, further comprising: surplus bit lines arranged in addition to said parity bit lines; surplus cells connected to said surplus bit lines and said word lines; and control means for replacing the memory cell or parity cell having a defect with a surplus cell connected to the corresponding surplus bit line.
Claim 12
Dependent Claim
33 words
A semiconductor memory according to claim 10, wherein said control means has a function for programmably registering a column selection address of said horizontal array and vertical array selectors as a defect address.
Claim 13
Dependent Claim
46 words
A semiconductor memory according to claim 11, further having defect separation means for disabling a check function of the parity circuit to which the memory cell or parity cell having a defect belongs, and means for enabling the surplus bit line of the replacing surplus cell.
Claim 14
Dependent Claim
50 words
A semiconductor memory according to claim 10, wherein said selector means further include defect separation means for disabling a check function of the parity circuit to which the memory cell or parity cell having a defect belongs, and means for enabling the surplus bit line of the replacing surplus cell.
Claim 15
Dependent Claim
74 words
A semiconductor memory according to claim 10, further comprising: a plurality of surplus memory cells connected to said bit lines corresponding to said memory cells; a plurality of surplus parity cells connected to said parity bit lines corresponding to said parity cells; a surplus word line for selecting said memory cells and said surplus parity cells; and control means for replacing a defect word line of said word lines with said surplus word line.
References Cited (Backward Citations)
US4456980A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-24 | 1991-11-23 | 1992-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-24 | 1995-11-23 | 1996-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-24 | 1999-11-23 | 2000-05-24 | $7700.00 | Window Closed / Lapsed |