US4746377A
Expired / Lapsed
US
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Semiconductor device with thermally oxidized insulating and arsenic diffusion layers
Assignee: Mitsubishi Electric Corp
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Filing: 1986-01-28
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Granted: 1988-05-24
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Expires: 2006-01-28
Abstract
Abstract In a surface region of a silicon semiconductor substrate (10), an arsenic diffusion layer (20) having a surface arsenic concentration of 5×10 18 cm -3 to 5×10 19 cm -3 is formed and then, the arsenic diffusion layer (20) is oxidized by a thermal oxidation method so that a thermally oxidized film (30) is formed on the arsenic diffusion layer (20). Thus, an insulating film (30) having an excellent insulating characteristic can be obtained, and therefore a MOS type semiconductor device with an excellent insulating characteristic can be obtained.
Inventors
- 👤 Kiyoteru Kobayashi
- 👤 Hideaki Arima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/037
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
56 words
A semiconductor device formed on a silicon substrate, comprising a silicon oxide film (30) obtained by thermal oxidation of an arsenic diffusion layer (20) formed in the surface of said silicon substrate, said arsenic diffusion layer (20) having a surface arsenic concentratin within a range of 5×10 18 cm -3 to 5×10 19 cm -3 .
Claim 2
Dependent Claim
56 words
A semiconductor device formed on a silicon substrate, comprising a silicon oxide film (30) obtained by thermal oxidation of an arsenic diffusion layer (20) formed in the surface of said silicon substrate, said arsenic diffusion layer (20) having a surface arsenic concentratin within a range of 5×10 18 cm -3 to 5×10 19 cm -3 .
Claim 3
Dependent Claim
41 words
A semiconductor device in accordance with claim 1, further comprising a conductive layer (40) formed on said silicon oxide film, said semiconductor device being a semiconductor device of metal oxide semiconductor type comprising said silicon oxide film as an insulating film.
Claim 4
Dependent Claim
71 words
A metal oxide semiconductor device including a conductive layer, a silicon oxide insulating film layer, an arsenic diffusion layer, and a silicon substrate, said silicon oxide insulating film being obtained by thermal oxidation of said arsenic diffusion layer, said arsenic diffusion layer being formed in the surface of said silicon substrate and having a surface arsenic concentration within a range of 5×10 18 cm -3 to 5×10 19 cm -3 .
Claim 5
Dependent Claim
71 words
A metal oxide semiconductor device including a conductive layer, a silicon oxide insulating film layer, an arsenic diffusion layer, and a silicon substrate, said silicon oxide insulating film being obtained by thermal oxidation of said arsenic diffusion layer, said arsenic diffusion layer being formed in the surface of said silicon substrate and having a surface arsenic concentration within a range of 5×10 18 cm -3 to 5×10 19 cm -3 .
References Cited (Backward Citations)
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Cited
US4183134A
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US4210689A
Cited
US4274892A
Cited
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Cited
US4676845A
Cited
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