US4745447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide on gallium indium arsenide Schottky barrier device
Assignee: Nokia Bell Labs
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Filing: 1985-06-14
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Granted: 1988-05-17
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Expires: 2005-06-14
Abstract
Abstract Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.
Inventors
- 👤 Chung Y. Chen
- 👤 Alfred Y. Cho
- 👤 Sung-Nee G. Chu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:53
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/801; H10D64/00; H10D64/60; H10D64/602; H10D64/64
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
71 words
A semiconductor device comprising at least one semiconductor element, said element comprising a. first epitaxial region comprising InP or III-V semiconductor compound approximately lattice-matched to InP, b. gate electrode, c. a second epitaxial region contacting both first epitaxial region and gate electrode, said second epitaxial region consisting essentially of gallium arsenide with thickness greater than 700 Å, and d. substrate comprising semi-insulating indium phosphide said substrate contacting said first epitaxial layer.
Claim 2
Dependent Claim
71 words
A semiconductor device comprising at least one semiconductor element, said element comprising a. first epitaxial region comprising InP or III-V semiconductor compound approximately lattice-matched to InP, b. gate electrode, c. a second epitaxial region contacting both first epitaxial region and gate electrode, said second epitaxial region consisting essentially of gallium arsenide with thickness greater than 700 Å, and d. substrate comprising semi-insulating indium phosphide said substrate contacting said first epitaxial layer.
Claim 3
Dependent Claim
16 words
The device of claim 1 in which the gallium arsenide thickness is greater than 800 Å.
Claim 4
Dependent Claim
17 words
The device of claim 2 in which the gallium arsenide thickness is between 1000 and 4000 Å.
Claim 5
Dependent Claim
15 words
The device of claim 3 in which the gallium arsenide thickness is approximately 1300 Å.
Claim 6
Dependent Claim
41 words
The device of claim 1 in which the semiconductor element is part of a field effect transistor comprising source electrode and drain electrode contacting either the first or second epitaxial region and the first and second epitaxial region exhibits n-type conductivity.
Claim 7
Dependent Claim
41 words
The device of claim 5 in which the first epitaxial region consists of at least one III-V semiconducting compound selected from the group consisting of InP, In 0 .53 Ga 0 .47 As and In 0 .52 Al 0 .48 As.
Claim 8
Dependent Claim
21 words
The device of claim 6 in which the first epitaxial region consists of n-type In 0 .53 Ga 0 .47 As.
Claim 9
Dependent Claim
18 words
The device of claim 7 in which the source electrode and drain electrode contacts the second epitaxial region.
Claim 10
Dependent Claim
13 words
The device of claim 1 in which the device includes a semiconductor laser.
Claim 11
Dependent Claim
12 words
The device of claim 1 in which the device includes a photodetector.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |