Method of producing semiconductor device using reactive ion etching

Claim 1

A method of producing a semiconductor device comprising the steps of: forming a contact hole in an insulator layer which is formed on a semiconductor substrate, said semiconductor substrate having an impurity region immediately under said contact hole; filling said contact hole by a material selected from a group consisting of tungsten, tungstem silicide, molybdenum, molybdenum silicide, tantalum, and tantalum silicide; forming a polycide layer over said insulator layer and said contact hole, said polycide layer being made up of a first layer made of titanium silicide and a second layer made of polysilicon; forming a photoresist pattern on said polycide layer; carrying out a dry etchign of said polycide layer in a reactive gas consisting essentially of bromine gas by use of said photoresist pattern as a mask to thereby form a wiring pattern on said semiconductor substrate, so that said material filling said contact hole substantially acts as a protective mask for said impurity reigon during said dry etching.

Claim 2

A method of producing a semiconductor device comprising the steps of: forming a contact hole in an insulator layer which is formed on a semiconductor substrate, said semiconductor substrate having an impurity region immediately under said contact hole; filling said contact hole by a material selected from a group consisting of tungsten, tungstem silicide, molybdenum, molybdenum silicide, tantalum, and tantalum silicide; forming a polycide layer over said insulator layer and said contact hole, said polycide layer being made up of a first layer made of titanium silicide and a second layer made of polysilicon; forming a photoresist pattern on said polycide layer; carrying out a dry etchign of said polycide layer in a reactive gas consisting essentially of bromine gas by use of said photoresist pattern as a mask to thereby form a wiring pattern on said semiconductor substrate, so that said material filling said contact hole substantially acts as a protective mask for said impurity reigon during said dry etching.

Claim 6

A method of producing a semiconductor device comprising the steps of: forming a contact hole in an insulator layer which is formed on a first conductor layer, said first conductor layer consisting essentially of a material selected from a group of aluminum, aluminum alloy, titanium, titanium silicide and polysilicon; filling said contact hole by a material selected form a group consisting of tungsten, tungsten silicide, molybdenum, molydenum silicide, tantalum, and tantalum silicide; forming a second conductor layer over said insulator layer and said contact hole, said second conducto rlayer consisting essentially of a material selected from a group of aluminum, aluminum alloy, titanium, titanium silicide and polysilicon; forming a photoresist pattern on said second conductor layer; carrying out a dry etching of said second conductor layer in a reactive gas conssiting essentially of bromine gas by use of said photoresist pattern as a mask to thereby form a wiring pattern of said second conductor layer, so that said material filling said contact hole substantially acts as a protective mask for said first conductor layer during said dry etching.

Claim 7

A method of producing a semiconductor device comprising the steps of: forming a contact hole in an insulator layer which is formed on a first conductor layer, said first conductor layer consisting essentially of a material selected from a group of aluminum, aluminum alloy, titanium, titanium silicide and polysilicon; filling said contact hole by a material selected form a group consisting of tungsten, tungsten silicide, molybdenum, molydenum silicide, tantalum, and tantalum silicide; forming a second conductor layer over said insulator layer and said contact hole, said second conducto rlayer consisting essentially of a material selected from a group of aluminum, aluminum alloy, titanium, titanium silicide and polysilicon; forming a photoresist pattern on said second conductor layer; carrying out a dry etching of said second conductor layer in a reactive gas conssiting essentially of bromine gas by use of said photoresist pattern as a mask to thereby form a wiring pattern of said second conductor layer, so that said material filling said contact hole substantially acts as a protective mask for said first conductor layer during said dry etching.

Claim 11

A method of producing a semiconductor device comprising the steps of: successively forming on a semiconductor substrate an oxide layer, a first polysilicon layer, a silicon dioxide layer, a second polysilicon layer and a metal silicide layer, said metal silicide layer consisting essentially of a material selected from a group of tungsten silicide, molybdenum silicide and tantalum silicide; forming a photoresist pattern on said metal silicide layer; carrying ou a first dry etching of said metal silicide layer and said second polysilicon layer by using said photoresist pattern as a mask; removing said photoresist pattern on said metal silicide layer and said second polysilicon layer which remain after said first dry etching; carrying out a second dry etching of said silicon dioxide layer by using said remaining metal silicide layer as a mask; and carrying out a third dry etching of said first polysilicon layer in a reactive gas consisting essentially of bromine gas by use of said remaining metal silicide layer as a mask to thereby form a gate electrode on said semiconductor substrate.

Claim 12

A method of producing a semiconductor device comprising the steps of: successively forming on a semiconductor substrate an oxide layer, a first polysilicon layer, a silicon dioxide layer, a second polysilicon layer and a metal silicide layer, said metal silicide layer consisting essentially of a material selected from a group of tungsten silicide, molybdenum silicide and tantalum silicide; forming a photoresist pattern on said metal silicide layer; carrying ou a first dry etching of said metal silicide layer and said second polysilicon layer by using said photoresist pattern as a mask; removing said photoresist pattern on said metal silicide layer and said second polysilicon layer which remain after said first dry etching; carrying out a second dry etching of said silicon dioxide layer by using said remaining metal silicide layer as a mask; and carrying out a third dry etching of said first polysilicon layer in a reactive gas consisting essentially of bromine gas by use of said remaining metal silicide layer as a mask to thereby form a gate electrode on said semiconductor substrate.