Patent US4744672A successfully refreshed from Google Patents.
US4744672A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor arrangement
Assignee: Semikron GmbH and Co KG
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Filing: 1981-03-10
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Granted: 1988-05-17
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Expires: 2001-03-10
Abstract
Abstract In a semiconductor arrangement including at least one semiconductor element composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, and a control element disposed for monitoring the operation of the semiconductor element, the control element has an internal photoelectric effect and is disposed for receiving the recombination radiation generated in the semiconductor material for producing an output parameter representative of the intensity of such radiation.
Inventors
- 👤 Werner Tursky
- 👤 Reinhard Grube
- 👤 Hans-Jurgen Fuchs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:27
CPC Classifications
H; H10; H10W; H10W42/00; H02; H02H; H02H7/00; H02H7/20; H02H7/205; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0826; H03K2017/0806
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device having at least one pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the forward current behavior of said control element, during the reverse bias phases of said semiconductor element.
Claim 2
Dependent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device having at least one pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the forward current behavior of said control element, during the reverse bias phases of said semiconductor element.
Claim 3
Dependent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device having at least one pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the dark current behavior of said control element, during the reverse bias phases of said semiconductor element.
Claim 4
Dependent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device having at least one pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the dark current behavior of said control element, during the reverse bias phases of said semiconductor element.
Claim 5
Dependent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device without a pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the value of the dark resistance of said control element, during the reverse bias phases of said semiconductor element.
Claim 6
Dependent Claim
175 words
In a power semiconductor arrangement including at least one power semiconductor element with high current carrying capability composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, a control element disposed for monitoring the operation of said semiconductor element, with said control element comprising a device having an internal photoelectric effect and disposed for receiving the recombination radiation generated in said semiconductor material for producing an output parameter representative of the intensity of such radiation, and monitoring means connected to said control element for regulating the current flowing through said semiconductor element as a function of the output parameter; the improvement wherein: said monitoring means is operative for monitoring the current through, and the temperature of, said semiconductor element; said control element is a semiconductor-based device without a pn-junction; and said monitoring means cooperate with said control element for monitoring the temperature of said semiconductor element, on the basis of the value of the dark resistance of said control element, during the reverse bias phases of said semiconductor element.
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