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Patent US4741919A successfully refreshed from Google Patents.
US4741919A
Expired / Lapsed
US
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Process for preparation of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-07-24
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Granted: 1988-05-03
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Expires: 2007-07-24
Abstract
Abstract A process for the preparation of a semiconductor device by the plasma chemical vapor deposition of amorphous silicon on a substrate, which comprises generating plasma in a deposition furnace by using a high frequency wave of less than 1 MHz to deposit an amorphous silicon film, and generating oxygen plasma in the same deposition furnace and irradiating the amorphous silicon film with the oxygen plasma.
Inventors
- 👤 Kanetake Takasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; C23C16/22; C23C16/24; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
65 words
A process for the preparation of a semiconductor device by the plasma chemical vapor deposition of amorphous silicon on a substrate, which comprises generating plasma in a deposition furnace by using a high frequency wave of less than 1 MHz to deposit an amorphous silicon film, and generating oxygen plasma in the same deposition furnace and irradiating the amorphous silicon film with the oxygen plasma.
Claim 2
Dependent Claim
65 words
A process for the preparation of a semiconductor device by the plasma chemical vapor deposition of amorphous silicon on a substrate, which comprises generating plasma in a deposition furnace by using a high frequency wave of less than 1 MHz to deposit an amorphous silicon film, and generating oxygen plasma in the same deposition furnace and irradiating the amorphous silicon film with the oxygen plasma.
Claim 3
Dependent Claim
28 words
A process as set forth in claim 1, wherein the plasma chemical vapor deposition is carried out using a wave of a frequency of 30 to 500 KHz.
Claim 4
Dependent Claim
14 words
A process as set forth in claim 2, wherein the frequency is 200 KHz.
Claim 5
Dependent Claim
25 words
A process as set forth in claim 3, wherein the plasma chemical vapor deposition is carried out with a power of 100 mW/cm 2 .
Claim 6
Dependent Claim
23 words
A process as set forth in claim 3, wherein the plasma chemical vapor deposition is carried out under a pressure of 1 Torr.
Claim 7
Dependent Claim
28 words
A process as set forth in claim 1, wherein the oxygen plasma treatment is carried out with a wave of a frequency of 30 KHz to 13.56 MHz.
Claim 8
Dependent Claim
25 words
A process as set forth in claim 1, wherein the oxygen plasma treatment is carried out at a substrate temperature of 200° to 350° C.
Claim 9
Dependent Claim
24 words
A process as set forth in claim 1, wherein the oxygen plasma treatment is carried out under a pressure of 0.2 to 2 Torr.
Claim 10
Dependent Claim
26 words
A process as set forth in claim 1, wherein the oxygen plasma treatment is carried out with a power of 50 to 500 mW/cm 2 .
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-03 | 1991-11-02 | 1992-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-03 | 1995-11-02 | 1996-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-03 | 1999-11-02 | 2000-05-03 | $7700.00 | Window Closed / Lapsed |