US4739381A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Piezoresistive strain sensing device
Assignee: Hitachi Ltd
•
Filing: 1986-03-12
•
Granted: 1988-04-19
•
Expires: 2006-03-12
Abstract
Abstract A piezoresistive strain sensing device is comprised of a semiconductor single-crystal substrate, having crystal indices in the (100) phase, and having p-type and n-type diffused resistors formed therein. A diffused resistance gauge is formed of the p-type and n-type resistors. Temperature compensation means are formed adjacent the resistance gauge in the substrate.
Inventors
- 👤 Hideo Miura
- 👤 Tatsuji Sakamoto
- 👤 Asao Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:04
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L1/00; G01L1/18; G01L5/00; G01L5/16; G01L5/161; G01L5/162; G01L9/02; G01L9/06; G01L9/065; H; H10; H10D; H10D48/00; H10D48/50; H10D84/00; H10D84/201; H10D84/204; H10D84/209
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
111 words
A piezoresistive strain sensing device comprising a semiconductor single-crystal substrate which has crystal indices in the (100) plane, first p-type diffused resistors and first n-type diffused resistors formed in said substrate, a diffused resistance gauge being constructed of said first p-type and first n-type diffused resistors, and further comprising a temperature compensation means which consists of second p-type diffused resistors and second n-type diffused resistors, formed in said semiconductor single-crystal substrate adjacent said diffused resistance gauge, wherein said first p-type diffused resistors and said first n-type diffused resistors are formed in the shape of rectangles, the strain sensing device further comprising electrode terminals provided on the four sides of each rectangle.
Claim 2
Dependent Claim
111 words
A piezoresistive strain sensing device comprising a semiconductor single-crystal substrate which has crystal indices in the (100) plane, first p-type diffused resistors and first n-type diffused resistors formed in said substrate, a diffused resistance gauge being constructed of said first p-type and first n-type diffused resistors, and further comprising a temperature compensation means which consists of second p-type diffused resistors and second n-type diffused resistors, formed in said semiconductor single-crystal substrate adjacent said diffused resistance gauge, wherein said first p-type diffused resistors and said first n-type diffused resistors are formed in the shape of rectangles, the strain sensing device further comprising electrode terminals provided on the four sides of each rectangle.
Claim 3
Dependent Claim
19 words
A piezoresistive strain sensing device according to claim 1, wherein said semiconductor single-crystal substrate is a single-crystal thin film.
Claim 4
Dependent Claim
93 words
A piezoresistive strain sensing device according to claim 1, wherein each of said first p-type diffused resistors is arranged in a direction of a crystal axis, and each of said first n-type diffused resistors is arranged in a directon of a crystal axis, and further wherein a first end of each of said first p-type and said first n-type diffused resistors are held electrically connected to a common electrode terminal, while each of the other ends of said first p-type and said first n-type diffused resistors are electrically connected to independent electrode terminals.
Claim 5
Dependent Claim
159 words
A piezoresistive strain sensing device comprising a semiconductor single-crystal substrate which has crystal indices in the (100) plane, first p-type diffused resistors and first n-type diffused resistors formed in said substrate, a diffused resistance gauge being constructed of said first p-type and first n-type diffused resistors, and further comprising a temperature compensation means which consists of second p-type diffused resistors and second n-type diffused resistors, formed in said semiconductor single-crystal substrate adjacent said diffused resistance gauge, wherein each of said first p-type diffused resistors is arranged in a direction of a crystal axis, and each of said first n-type diffused resistors is arranged in a direction of crystal axis, and further wherein a first end of each of said first p-type and said first n-type diffused resistors are held electrically connected to a common electrode terminal, while each of the other ends of said first p-type and said first n-type diffused resistors are electrically connected to independent electrode terminals.
Claim 6
Dependent Claim
159 words
A piezoresistive strain sensing device comprising a semiconductor single-crystal substrate which has crystal indices in the (100) plane, first p-type diffused resistors and first n-type diffused resistors formed in said substrate, a diffused resistance gauge being constructed of said first p-type and first n-type diffused resistors, and further comprising a temperature compensation means which consists of second p-type diffused resistors and second n-type diffused resistors, formed in said semiconductor single-crystal substrate adjacent said diffused resistance gauge, wherein each of said first p-type diffused resistors is arranged in a direction of a crystal axis, and each of said first n-type diffused resistors is arranged in a direction of crystal axis, and further wherein a first end of each of said first p-type and said first n-type diffused resistors are held electrically connected to a common electrode terminal, while each of the other ends of said first p-type and said first n-type diffused resistors are electrically connected to independent electrode terminals.
References Cited (Backward Citations)
US3123788A
Cited
US3277698A
Cited
US3492861A
Cited
US4028564A
Cited
US3818289A
Cited
US3922705A
Cited
US3899695A
Cited
JPS5660066A
Cited
JPS56140229A
Cited
JPS5795673A
Cited
US4510671A
Cited
US4672411A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |