Pressure sensitive semiconductor device

Abstract

Abstract PURPOSE:To measure with high accuracy strain or stress in elements by providing a P type resistor element with the current direction being 0, + or -45 deg., + or -60 deg., 90 deg. to an axis (110) and an N type resistor with the current direction horizontal and vertical to the axis 110 on an Si substrate of the plain <111>. CONSTITUTION:An N type resistor elements 103, 104 are formed on the P type region and a P type resistor elements 105...110 are formed on the N type region on the plain <111> of an N type Si substrate 101. The direction of current of the elements 103, 105 is parallel to the X axis 123 of <1-10>, and the current direction of the elements 104, 106 is parallel to the Y axis 124 of <11-2>, the elements 107, 108 are at 60 deg., -60 deg. to the axis 123, and the elements 109, 110 have current directions +45 deg., -45 deg. respectively to the axis 123. With the pressure sensitive elements of this construction, the rate of resistance change in the elements due to stress from stress tensor can be calculated by defining the Z axis that crosses with the X and Y axises. Now a third dimensional strain and stress can be measured and a change in the property while being fabricated may be predicated and construction analysis on the crack of elements is also possible.

Inventors

• 👤 Koji Suzuki
• 👤 Toshio Aoki
• 👤 Shigeru Komatsu
• 👤 Satoshi Takahashi
• 👤 Takao Ito

Bibliographic Details