US4738916A
Expired / Lapsed
US
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Intermediate layer material of three-layer resist system
Assignee: NTT Inc
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Filing: 1986-07-14
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Granted: 1988-04-19
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Expires: 2006-07-14
Abstract
Abstract An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R 3 SiO 1/2 ) m .(R 2 SiO) n .(RSiO 3/2 ) p .(SiO 2 ) q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1≧m>0, 1≧n≧0, 1≧p≧0, 1≧q≧0 (where p and q are not simultaneously 0), m/p≦0.3 (where p≠0), and/or m/q≦1 (where q≠0)}.
Inventors
- 👤 Hideo Namatsu
- 👤 Akira Yoshikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/09; G03F7/094; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
In a three-layer resist system for use in processing of a semiconductor substrate comprising a bottom layer, an intermediate layer on said bottom layer, and a top layer of radiation sensitive material on said intermediate layer, the improvement wherein: said intermediate layer comprises an organopolysiloxane which has a thermal softening point not lower than about 80° C. without crosslinking and is expressed by the general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units nd satisfy m+n+p+q=1, 1≧m>0, 1≧n≧0, 1≧p≧0, 1≧q≧0 (where p and q are not simultaneously 0), m/p≦0.3 (where p≠0), and/or m/q≦1 (where q≠0)}.
Claim 2
Dependent Claim
114 words
In a three-layer resist system for use in processing of a semiconductor substrate comprising a bottom layer, an intermediate layer on said bottom layer, and a top layer of radiation sensitive material on said intermediate layer, the improvement wherein: said intermediate layer comprises an organopolysiloxane which has a thermal softening point not lower than about 80° C. without crosslinking and is expressed by the general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units nd satisfy m+n+p+q=1, 1≧m>0, 1≧n≧0, 1≧p≧0, 1≧q≧0 (where p and q are not simultaneously 0), m/p≦0.3 (where p≠0), and/or m/q≦1 (where q≠0)}.
Claim 3
Dependent Claim
9 words
The system of claim 1, wherein n is 0.
Claim 4
Dependent Claim
19 words
The system of claim 2, wherein each R is a lower alkyl group or a lower lower alkoxy group.
Claim 5
Dependent Claim
11 words
The system of claim 3, wherein each R is methyl group.
Claim 6
Dependent Claim
14 words
The system of claim 2 wherein each R is methyl, ethyl, methoxy or ethoxy.
Claim 7
Dependent Claim
14 words
The system of claim 1, wherein the organopolysiloxane is soluble in an organic solvent.
Claim 8
Dependent Claim
18 words
The system of claim 6, wherein the organopolysiloxane has a molecular weight of about 300 to about 50,000.
Claim 9
Dependent Claim
17 words
The system of claim 1, wherein the organopolysiloxane has a structure expressed by a formula (R.sub.3 SiO.sub.1/2).sub.m.(RSiO.sub.3/2).sub.p.
Claim 10
Dependent Claim
14 words
The system of claim 8 wherein each R is methyl, ethyl, methoxy or ethoxy.
Claim 11
Dependent Claim
17 words
The system of claim 1, wherein the organopolysiloxane has a structure expressed by a formula (R.sub.3 SiO.sub.1/2).sub.m.(SiO.sub.2).sub.q.
Claim 12
Dependent Claim
14 words
The system of claim 10 wherein each R is methyl, ethyl, methoxy or ethoxy.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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