EP0123560A2
Expired / Lapsed
EP
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Method for forming flattened film
Assignee: Toshiba Corp
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Filing: 1984-04-25
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Granted: —
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Expires: 2004-04-25
Abstract
Abstract A flat film (13) can be formed on afunctional structure (12) having uneven surface formed on a semiconductor substrate firstly by applying a filmforming organic material (13) capable of being cured by energy beams and exhibiting fluidity by heat on the uneven surface of the functional structure. Then, the organic material (13) is fluidized by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material (13). Energy beams are irradiated to the flattened organic material (13) to cure the flattened organic material (13), thereby converting the flattened organic material (13) into a cured film which is not deformed by heat and energy beams.
Inventors
- 👤 Iwao C/O Patent Division Higashikawa
- 👤 Tsunetoshi C/O Patent Division Arikado
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 14:33
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/68; H10P14/683; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P50/693; H10P95/08; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
103 words
A method for forming a flat film on a functional structure having uneven surface formed on a semiconductor substrate comprising the steps of: applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on said uneven surface of the functional structure; fluidizing the organic material by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material; and irradiating energy beams to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a cureo film which is not deformed by heat and energy beams.
Claim 2
Independent Claim
103 words
A method for forming a flat film on a functional structure having uneven surface formed on a semiconductor substrate comprising the steps of: applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on said uneven surface of the functional structure; fluidizing the organic material by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material; and irradiating energy beams to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a cureo film which is not deformed by heat and energy beams.
Claim 3
Dependent Claim
30 words
The method according to claim 1, characterized in that said organic material is applied to the surface of said functional structure in the form of a solution in a solvent.
Claim 4
Dependent Claim
22 words
The method according to claim 2, characterized in that said organic material comprises a siloxane-based polymer, and said solvent is an alcohol.
Claim 5
Dependent Claim
15 words
The method according to claim 3, characterizes in that said siloxane-based polymer is a polyorganosiloxane.
Claim 6
Dependent Claim
18 words
The method according to claim 4, characterized in that said organic material is polyvinylmethyl siloxane or polyvinylphenyl siloxane.
Claim 7
Dependent Claim
22 words
The method according to claim 2, characterized in that said organic material comprises a styrene-based polymer, and said solvent is ethylcellosolve acetate.
Claim 8
Dependent Claim
18 words
The method according to claim 6, characterized in that said styrene-based polymer is polychloromethyl styrene or chlorinated polystyrene.
Claim 9
Independent Claim
167 words
A method for patterning a functional structure having uneven surface formed on a semiconductor substrate comprising the steps of: forming a first film on said uneven surface of the functional structure; applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on the first film surface; fluidizing the organic material by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material; irradiating energy beams to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a second film which is not deformed by heat and energy beams; forming a first pattern comprising a resist on the surface of said second film; selectively etching said second film using said first pattern as a mask, thereby forming a second pattern; selectively etching said first film using said second pattern as a mask, thereby forming a third pattern; and patterning said functional structure using said third pattern as a mask.
Claim 10
Independent Claim
167 words
A method for patterning a functional structure having uneven surface formed on a semiconductor substrate comprising the steps of: forming a first film on said uneven surface of the functional structure; applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on the first film surface; fluidizing the organic material by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material; irradiating energy beams to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a second film which is not deformed by heat and energy beams; forming a first pattern comprising a resist on the surface of said second film; selectively etching said second film using said first pattern as a mask, thereby forming a second pattern; selectively etching said first film using said second pattern as a mask, thereby forming a third pattern; and patterning said functional structure using said third pattern as a mask.
Claim 11
Dependent Claim
30 words
The method according to claim 8, characterized in that said organic material is applied to the surface of said first film in the form of a solution in a solvent.
Claim 12
Dependent Claim
21 words
The method according to claim 9, characterized in that said organic-material comprises a siloxane-based polymer, and said solvent is an alcohol.
Claim 13
Dependent Claim
15 words
The method according to claim 10, characterized in that said siloxane-based polymer is a polyorganosiloxane.
Claim 14
Dependent Claim
18 words
The method according to claim 11, characterized in that said siloxane-based polymer is polyvinylmethyl siloxane or polyvinylphenyl siloxane.
Claim 15
Dependent Claim
16 words
The method according to claim 10, characterized in that said organic material comprises a styrene-based polymer.
Claim 16
Dependent Claim
21 words
1 4 . The method according to claim 13, characterized in that said styrene-based polymer is polychloromethyl styrene or chlorinated polystyrene.
References Cited (Backward Citations)
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