Patent US151652A successfully refreshed from Google Patents.
Patent US4737757A successfully refreshed from Google Patents.
US4737757A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin-film resistor
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1986-06-11
•
Granted: 1988-04-12
•
Expires: 2006-06-11
Abstract
Abstract A thin-film resistor comprising a thin film of a nitride of at least one element belonging to groups III-VI of the periodic table. The thin-film resistor has a metal oxide layer comprising at least one metal oxide selected from the group consisting of manganese oxide, iron oxide, cobalt oxide, nickel oxide, zinc oxide, indium oxide, tin oxide and indium tin oxide interposed between the nitride thin film and an electrode for external connection.
Inventors
- 👤 Atsuo Senda
- 👤 Toshi Numata
- 👤 Takuji Nakagawa
- 👤 Yoshifumi Ogiso
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:28
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/006; H01C1/00; H01C1/14; H01C1/142
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
76 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and a metal oxide layer interposed between said thin-film nitride resistance member and said external connection electrode, wherein said metal oxide layer comprises at least one metal oxide selected from the group consisting of manganese oxide, iron oxide, cobalt oxide, nickel oxide, zinc oxide, indium oxide, tin oxide and indium tin oxide.
Claim 2
Dependent Claim
76 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and a metal oxide layer interposed between said thin-film nitride resistance member and said external connection electrode, wherein said metal oxide layer comprises at least one metal oxide selected from the group consisting of manganese oxide, iron oxide, cobalt oxide, nickel oxide, zinc oxide, indium oxide, tin oxide and indium tin oxide.
Claim 3
Dependent Claim
49 words
A thin-film resistor in accordance with claim 1, wherein said metal oxide comprises a mixture of zinc oxide and about 0.5 to 99.9 percent by mol of at least one metal oxide selected from the group consisting of iron oxide, zirconium oxide, indium oxide, tin oxide and lead oxide.
Claim 4
Dependent Claim
28 words
A thin-film resistor in accordance with claim 1, wherein said metal oxide layer comprises a stable metal oxide lower in specific resistance than the thin-film nitride resistance member.
Claim 5
Dependent Claim
29 words
A thin-film resistor in accordance with claim 3, wherein said thin-film nitride resistance member comprises at least one nitride of an element selected from the elements in groups III-VI.
Claim 6
Dependent Claim
17 words
A thin-film resistor in accordance with claim 3, wherein said thin-film nitride resistance member comprises chromium nitride.
Claim 7
Dependent Claim
37 words
A thin-film resistor in accordance with claim 3, wherein said thin-film nitride resistance member comprises at least one nitride of an element selected from the group consisting of tantalum, titanium, zirconium, hafnium, aluminum, niobium, boron, and chromium.
Claim 8
Dependent Claim
71 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and an intermediate layer interposed between said thin film nitride resistance member and said external connection electrode, said intermediate layer substantially preventing the dissociation of nitrogen from the thin-film nitride resistance member, and the transfer of such nitrogen to the external connection electrode, under high temperature conditions.
Claim 9
Dependent Claim
71 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and an intermediate layer interposed between said thin film nitride resistance member and said external connection electrode, said intermediate layer substantially preventing the dissociation of nitrogen from the thin-film nitride resistance member, and the transfer of such nitrogen to the external connection electrode, under high temperature conditions.
Claim 10
Dependent Claim
28 words
A thin-film resistor in accordance with claim 7, said intermediate layer further substantially preventing change of the color of the thin-film nitride resistance member under high temperature conditions.
Claim 11
Dependent Claim
60 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and an intermediate layer interposed between said thin-film nitride resistance member and said external connection electrode, said intermediate layer limiting a change in the resistance value of the thin-film nitride resistance member under high temperature conditions.
Claim 12
Dependent Claim
60 words
A thin-film resistor comprising: a thin-film nitride resistance member; an external connection electrode for connecting said thin-film nitride resistance member with an external element; and an intermediate layer interposed between said thin-film nitride resistance member and said external connection electrode, said intermediate layer limiting a change in the resistance value of the thin-film nitride resistance member under high temperature conditions.
Claim 13
Dependent Claim
22 words
A thin-film resistor in accordance with claim 9, wherein such change in resistance value is limited to less than about 0.1 percent.
Claim 14
Dependent Claim
22 words
A thin-film resistor in accordance with claim 10, wherein such change in resistance value is limited to less than about 0.05 percent.
References Cited (Backward Citations)
US3591413A
Cited
JPS5434901A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-12 | 1991-10-12 | 1992-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-12 | 1995-10-12 | 1996-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-12 | 1999-10-12 | 2000-04-12 | $7700.00 | Window Closed / Lapsed |