Patent US4734709A successfully refreshed from Google Patents.
US4734709A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermal head and method for fabricating
Assignee: Fujifilm Business Innovation Corp
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Filing: 1986-04-28
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Granted: 1988-03-29
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Expires: 2006-04-28
Abstract
Abstract A thermal head which comprises a heating resistor film made of tantalum nitride orientated in (101) direction by a reactive sputtering process.
Inventors
- 👤 Kenichi Kobayashi
- 👤 Hiroshi Fujimagari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:01
CPC Classifications
H; H10; H10N; H10N97/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
59 words
A thermal head comprising an electrode pattern and a heating resistor film, for printing picture information by selectively supplying power to the heating resistor film so as to heat said film according to said picture information, characterized in that said heating resistor film is made of tantalum nitride (Ta 2 N) a hexagonal close-packed lattice orientated in (101) direction.
Claim 2
Dependent Claim
59 words
A thermal head comprising an electrode pattern and a heating resistor film, for printing picture information by selectively supplying power to the heating resistor film so as to heat said film according to said picture information, characterized in that said heating resistor film is made of tantalum nitride (Ta 2 N) a hexagonal close-packed lattice orientated in (101) direction.
Claim 3
Independent Claim
83 words
A method of fabricating a thermal head for printing picture information by selectively supplying power to a heating resistor film of the thermal head so as to heat said film according to said picture information, said method comprises the steps of forming an electrode pattern and forming the heating resistor film, characterized in that therefor the heating resistor film includes a step of forming the tantalum nitride film orientated in (101) direction under a controlled nitrogen partial pressure by a reactive sputtering process.
Claim 4
Independent Claim
83 words
A method of fabricating a thermal head for printing picture information by selectively supplying power to a heating resistor film of the thermal head so as to heat said film according to said picture information, said method comprises the steps of forming an electrode pattern and forming the heating resistor film, characterized in that therefor the heating resistor film includes a step of forming the tantalum nitride film orientated in (101) direction under a controlled nitrogen partial pressure by a reactive sputtering process.
Claim 5
Dependent Claim
19 words
A method as set forth in claim 2, wherein said reactive sputtering process is an RF magnetron sputtering process.
Claim 6
Dependent Claim
34 words
A method as set forth in claim 2, wherein said reactive sputtering process is carried out at a nitrogen partial pressure in the range of about 1.0×10 -2 Pa to about 1.9×10 -2 Pa.
Claim 7
Independent Claim
101 words
A method of fabricating a thermal head for printing picture information by selectively supplying power to a heating resistor film of the thermal head so as to heat said film according to said picture information, said method comprising the steps of forming an electrode pattern and forming the heating resistor film, characterized in that the step of forming the heating resistor film includes a step of forming the tantalum nitride film in a hexagonal close-packed lattice orientated in (101) direction under a controlled nitrogen partial pressure of about 1.0×10 -2 Pa to about 1.9×10 -2 Pa by a reactive sputtering process.
Claim 8
Independent Claim
101 words
A method of fabricating a thermal head for printing picture information by selectively supplying power to a heating resistor film of the thermal head so as to heat said film according to said picture information, said method comprising the steps of forming an electrode pattern and forming the heating resistor film, characterized in that the step of forming the heating resistor film includes a step of forming the tantalum nitride film in a hexagonal close-packed lattice orientated in (101) direction under a controlled nitrogen partial pressure of about 1.0×10 -2 Pa to about 1.9×10 -2 Pa by a reactive sputtering process.
References Cited (Backward Citations)
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GB1247269A
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GB1249951A
Cited
US3763026A
Cited
GB1503969A
Cited
US4136274A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-29 | 1991-09-28 | 1992-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-29 | 1995-09-28 | 1996-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-29 | 1999-09-28 | 2000-03-29 | $7700.00 | Window Closed / Lapsed |