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US4734593A Expired / Lapsed US ⏱️ 0.0 years remaining

CML bias generator

Assignee: Advanced Micro Devices Inc
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Filing: 1986-10-29
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Granted: 1988-03-29
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Expires: 2006-10-29
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Abstract

Abstract A bias generator for use in CML gate circuits provides an output reference voltage that is substantially independent of variations in supply voltage over a wide temperature range. The bias generator includes a temperature and voltage compensating circuit portion which is formed of an emitter resistor and a diode-connected transistor. The emitter resistor is used to control the output reference voltage for the lower temperatures and the base-emitter voltage of the transistor determines the output reference voltage for the higher temperatures.

Inventors

  • 👤 Sasan Teymouri
  • 👤 Sungil Lee

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 18:16
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00369; H03K19/00376; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/22; G05F3/222; G05F3/227

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 303 words
A bias generator circuit for use with current-mode logic gates which has an output reference voltage that is substantially indepenent of supply potential and temperature variations, said generator circuit comprising: a first transistor having its collector connected to the supply potential via a first load resistor; a second transistor having its collector connected to the supply potential via a second load resistor and its base connected to the collector of said first transistor; said second transistor having its emitter coupled to an output node for generating an output reference voltage and connected to the base of said first transistor via an impedance compensating resistor; compensating means coupled to the emitter of said first transistor for minimizing variations in said output reference voltage as a function of changes in the supply potential and temperature; said compensating means being formed of a first emitter resistor and a diode-connected third transistor, said first emitter resistor having its one end connected to the emitter of said first transistor and to the collector and base of said third transistor, the emitter of said third transistor being connected to the other end of said first emitter resistor and to a ground potential; the value of the first emitter resistor controlling the output reference voltage for lower temperatures and the base-emitter voltage of the third transistor controlling the output reference voltage for higher temperatures; stabilizing means coupled to the emitter of said second transistor for maintaining the output reference voltage to be balanced; and said stabilizing means being formed of a fourth transistor and a second emitter resistor, said fourth transistor having its collector and base connected to the emitter of said second transistor and its emitter connected to one end of said second emitter resistor, the other end of said second emitter resistor being connected to the ground potential.
Claim 2
Dependent Claim 303 words
A bias generator circuit for use with current-mode logic gates which has an output reference voltage that is substantially indepenent of supply potential and temperature variations, said generator circuit comprising: a first transistor having its collector connected to the supply potential via a first load resistor; a second transistor having its collector connected to the supply potential via a second load resistor and its base connected to the collector of said first transistor; said second transistor having its emitter coupled to an output node for generating an output reference voltage and connected to the base of said first transistor via an impedance compensating resistor; compensating means coupled to the emitter of said first transistor for minimizing variations in said output reference voltage as a function of changes in the supply potential and temperature; said compensating means being formed of a first emitter resistor and a diode-connected third transistor, said first emitter resistor having its one end connected to the emitter of said first transistor and to the collector and base of said third transistor, the emitter of said third transistor being connected to the other end of said first emitter resistor and to a ground potential; the value of the first emitter resistor controlling the output reference voltage for lower temperatures and the base-emitter voltage of the third transistor controlling the output reference voltage for higher temperatures; stabilizing means coupled to the emitter of said second transistor for maintaining the output reference voltage to be balanced; and said stabilizing means being formed of a fourth transistor and a second emitter resistor, said fourth transistor having its collector and base connected to the emitter of said second transistor and its emitter connected to one end of said second emitter resistor, the other end of said second emitter resistor being connected to the ground potential.
Claim 3
Dependent Claim 24 words
A bias generator circuit as claimed in claim 1, wherein said bias generator circuit is formed as a part of a monolithic integrated circuit.
Claim 4
Dependent Claim 23 words
A bias generator as claimed in claim 1, wherein the ratio of the emitter areas of said first and third transistors is 5:1.
Claim 5
Dependent Claim 23 words
A bias generator as claimed in claim 3, wherein the ratio of the emitter areas of said second and third transistors is 5:1.
Claim 6
Dependent Claim 33 words
A bias generator as claimed in claim 1, wherein the output reference voltage is substantially constant with ±10% variations in the supply potential over the temperature range of -55° C. to +155° C.
Claim 7
Dependent Claim 19 words
A bias generator circuit as claimed in claim 1, wherein said first and second transistors are NPN bipolar transistors.
Claim 8
Dependent Claim 18 words
A bias generator circuit as claimed in claim 1, wherein all of the transistors are NPN bipolar transistors.

References Cited (Backward Citations)

US3555309A Cited
US3794861A Cited
US3937988A Cited
US4061959A Cited
US4260911A Cited
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US4547881A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-03-29 1991-09-28 1992-03-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-03-29 1995-09-28 1996-03-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-03-29 1999-09-28 2000-03-29 $7700.00 Window Closed / Lapsed

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