Patent US4734340A successfully refreshed from Google Patents.
US4734340A
Expired / Lapsed
US
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Dielectric thin film
Assignee: Sony Corp
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Filing: 1986-07-14
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Granted: 1988-03-29
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Expires: 2006-07-14
Abstract
Abstract A high dielectric constant capacitor comprising a thin film deposited on a substrate, the thin film being composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent.
Inventors
- 👤 Masaki Saito
- 👤 Toshio Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/085; H01G4/10
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
69 words
A high dielectric constant capacitor comprising a substrate and a thin film formed on said substrate said thin film consisting essentially of a mixture of a tantalum oxide and a titanium oxide in which the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent, said thin film being produced by chemical vapor deposition and decomposition of a tantalum alkoxide and a titanium alkoxide.
Claim 2
Dependent Claim
69 words
A high dielectric constant capacitor comprising a substrate and a thin film formed on said substrate said thin film consisting essentially of a mixture of a tantalum oxide and a titanium oxide in which the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent, said thin film being produced by chemical vapor deposition and decomposition of a tantalum alkoxide and a titanium alkoxide.
Claim 3
Dependent Claim
29 words
A high dielectric constant capacitor according to claim 1, wherein said chemical vapor deposition includes the step of an oxygen-assisted pyrolysis of a tantalum alkoxide and a titanium alkoxide.
Claim 4
Dependent Claim
23 words
A high dielectric constant capacitor according to claim 2, wherein said tantalum alkoxide is tantalum pentaethylate and said titanium alkoxide is titanium tetraisopropylate.
Claim 5
Independent Claim
49 words
The method of forming a high dielectric constant capacitor which comprises depositing on a substrate a thin film of a tantalum oxide and a titanium oxide by chemical vapor deposition, said thin film having a ratio of Ti to Ta in the range from 0.1 to 4 atomic percent.
Claim 6
Independent Claim
49 words
The method of forming a high dielectric constant capacitor which comprises depositing on a substrate a thin film of a tantalum oxide and a titanium oxide by chemical vapor deposition, said thin film having a ratio of Ti to Ta in the range from 0.1 to 4 atomic percent.
Claim 7
Dependent Claim
25 words
A method according to claim 4 wherein said chemical vapor deposition includes the step of oxygen-assisted pyrolysis of a tantalum alkoxide and a titanium alkoxide.
Claim 8
Dependent Claim
22 words
A method according to claim 5 in which said tantalum alkoxide is tantalum pentaethylate and said titanium alkoxide is titanium tetra isopropylate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-29 | 1991-09-28 | 1992-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-29 | 1995-09-28 | 1996-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-29 | 1999-09-28 | 2000-03-29 | $7700.00 | Window Closed / Lapsed |