Patent US2616499A successfully refreshed from Google Patents.
Patent DE154366C successfully refreshed from Google Patents.
Patent US4733291A successfully refreshed from Google Patents.
US4733291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact vias in semiconductor devices
Assignee: Konica Minolta Inc
•
Filing: 1985-11-15
•
Granted: 1988-03-22
•
Expires: 2005-11-15
Abstract
Abstract A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the overhang problem can be consistently avoided if the ratio of glass thickness to via-to-via spacing is about ≦0.393.
Inventors
- 👤 Roland A. Levy
- 👤 Kurt Nassau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
59 words
A microminiature device comprising a dielectric layer made of a reflowable mateiral, spaced-apart vias in said layer, said vias having no overhangs therein at equilibrium after reflow, the smallest spacing s between vias being approximately≦1.75 μm, wherein t is the maximum thickness of any of the walls defining said vias in said layer, and wherein t/s is approximately ≦0.393.
Claim 2
Dependent Claim
59 words
A microminiature device comprising a dielectric layer made of a reflowable mateiral, spaced-apart vias in said layer, said vias having no overhangs therein at equilibrium after reflow, the smallest spacing s between vias being approximately≦1.75 μm, wherein t is the maximum thickness of any of the walls defining said vias in said layer, and wherein t/s is approximately ≦0.393.
Claim 3
Dependent Claim
12 words
A device as in claim 1 wherein said reflowable material comprises glass.
Claim 4
Dependent Claim
26 words
A device as in claim 2 wherein said reflowable glass is selected from the group consisting of phosphosilicate glass, borophosphosilicate glass, germanophosphosilicate glass and arsenophosphosilicate glass.
Claim 5
Dependent Claim
34 words
A device as in claim 1 further including a gate electrode underlying said layer, at least one of the vias in said layer exposing a portion of the top surface of said gate electrode.
Claim 6
Dependent Claim
14 words
A device as in claim 4 wherein said gate electrode comprises a metallic layer.
Claim 7
Dependent Claim
28 words
A device as in claim 5 wherein the thickness t of said dielectric layer sufficiently exceeds the thickness of said gate electrode to provide effective insulating coverage thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-22 | 1991-09-21 | 1992-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-22 | 1995-09-21 | 1996-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-22 | 1999-09-21 | 2000-03-22 | $7700.00 | Window Closed / Lapsed |