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US4733284A
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Semiconductor devices and laminates including phosphorus doped transparent conductive film
Assignee: TPO Hong Kong Holding Ltd
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Filing: 1986-09-26
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Granted: 1988-03-22
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Expires: 2006-09-26
Abstract
Abstract A transparent conductive film formed on a transparent substrate of a thin film transistor or solar cell contains an element falling in Group III or V of the periodic table. The transparent conductive film is formed in contact with a semiconductor layer.
Inventors
- 👤 Shigeo Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6741; H10D30/6743; H10F; H10F71/00; H10F71/138; H10F77/00; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
68 words
A laminate of a transparent conductive film and a semiconductor layer, said transparent conductive film being an ITO film containing phosphorus and being formed on an insulating substrate, said semiconductor layer being formed on said ITO film through a plasma assisted chemical vapor deposition process, at least the surface area of said semiconductor layer in contact with said ITO film containing phosphorus to form an ohmic contact layer.
Claim 2
Dependent Claim
68 words
A laminate of a transparent conductive film and a semiconductor layer, said transparent conductive film being an ITO film containing phosphorus and being formed on an insulating substrate, said semiconductor layer being formed on said ITO film through a plasma assisted chemical vapor deposition process, at least the surface area of said semiconductor layer in contact with said ITO film containing phosphorus to form an ohmic contact layer.
Claim 3
Dependent Claim
34 words
The laminate of a transparent conductive film and a semiconductor layer according to claim 1 wherein the phosphorus is contained in the surface of said ITO film in the form of a phosphorus-doped layer.
Claim 4
Dependent Claim
26 words
The laminate of a transparent conductive film and a semiconductor layer according to claim 1 wherein said ITO film contains the phosphorus substantially throughout its thickness.
Claim 5
Dependent Claim
75 words
A thin film transistor comprising source and drain electrodes of an ITO film containing phosphorus and formed on an insulating substrate, a semiconductor layer partly in contact with said source and drain electrodes and forming an active region of said thin film transistor, said semiconductor layer being formed through a plasma assisted chemical vapor deposition process, surface areas of said semiconductor layer in contact with said ITO film containing phosphorus to form an ohmic layer.
Claim 6
Dependent Claim
75 words
A thin film transistor comprising source and drain electrodes of an ITO film containing phosphorus and formed on an insulating substrate, a semiconductor layer partly in contact with said source and drain electrodes and forming an active region of said thin film transistor, said semiconductor layer being formed through a plasma assisted chemical vapor deposition process, surface areas of said semiconductor layer in contact with said ITO film containing phosphorus to form an ohmic layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-22 | 1991-09-21 | 1992-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-22 | 1995-09-21 | 1996-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-22 | 1999-09-21 | 2000-03-22 | $7700.00 | Window Closed / Lapsed |