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US4727408A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor

Assignee: NEC Electronics Corp
•
Filing: 1985-06-11
•
Granted: 1988-02-23
•
Expires: 2005-06-11
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Abstract

Abstract A semiconductor device comprises a semiconductor substrate, a vertical transistor formed in the substrate, highly doped regions selectively and concurrently formed within the base region and the collector region by ion-implantation method etc., respectively, the one highly doped region within the collector region being spaced from the base region, the other highly doped regions within the base region serving as base ohmic contact regions, a clamping diode consisting of a junction between the one highly doped region and the collector region and having breakdown voltage lower than a breakdown voltage across the collector and the emitter regions of the transistor, and a connection conductor formed on the substrate so as to electrically connect the one of the base ohmic contact regions with the one highly doped region for forming the junction of the clamping diode. The transistor device provided with the above-featured clamping diode structure can prevent undesired parasitic transistor effect from being produced. There is also provided a method of fabricating a high breakdown voltage vertical transistor device by which the above-mentioned clamping diode structure can be monolithically formed with a high efficiency.

Inventors

  • 👤 Mikio Hatakeyama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 06:33
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/611

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 134 words
A semiconductor device with a high breakdown voltage vertical transistor comprising: a collector region of a first conductivity type; a base region of a second conductivity type formed in said collector region; an emitter region of said first conductivity type formed within said base region, said collector region, said base region and said emitter region forming a vertical transistor having a predetermined breakdown voltage across said collector region and said emitter region; a highly doped clamping diode region of the second conductivity type formed within said collector region and laterally spaced from said base region and forming a junction having a breakdown voltage lower than the predetermined breakdown voltage together with said collector region to form a clamping diode; and a connection conductor for electricity connecting said base region with said clamping diode region.
Claim 2
Dependent Claim 134 words
A semiconductor device with a high breakdown voltage vertical transistor comprising: a collector region of a first conductivity type; a base region of a second conductivity type formed in said collector region; an emitter region of said first conductivity type formed within said base region, said collector region, said base region and said emitter region forming a vertical transistor having a predetermined breakdown voltage across said collector region and said emitter region; a highly doped clamping diode region of the second conductivity type formed within said collector region and laterally spaced from said base region and forming a junction having a breakdown voltage lower than the predetermined breakdown voltage together with said collector region to form a clamping diode; and a connection conductor for electricity connecting said base region with said clamping diode region.
Claim 3
Dependent Claim 42 words
A semiconductor device according to claim 1, further comprising: at least two highly doped ohmic contact regions formed within said base region, said connection conductor being formed so as to connect said clamping diode region with one of said ohmic contact regions.
Claim 4
Dependent Claim 52 words
A semiconductor device according to claim 1, wherein said clamping diode region is spaced from said base region to such an extent that said clamping diode region and said base region are contiguously joined by depletion layers extending from said respective regions when the breakdown voltage of said vertical transistor is applied.
Claim 5
Dependent Claim 26 words
A semiconductor device according to claim 1, wherein said clamping diode region has the same doping concentration as that of each of said ohmic contact regions.
Claim 6
Dependent Claim 59 words
A semiconductor device according to claim 1, wherein said collector region comprises a semiconductor substrate having a first surface on which said base region and said emitter region are formed and a second surface opposite said first surface, and wherein a region of said first conducting type is provided for mounting a collector electrode formed on the second surface.
Claim 7
Dependent Claim 30 words
A semiconductor device according to claim 2, further comprising: a base electrode formed directly on the other ohmic contact region and an emitter electrode formed directly on said emitter region.
Claim 8
Dependent Claim 20 words
A semiconductor device according to claim 5, further comprising: an insulating oxide film on the second surface of said substrate.

References Cited (Backward Citations)

US4282555A Cited
US4355322A Cited
JPS5734360A Cited
US4626882A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-02-22 1991-08-24 1992-02-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-02-22 1995-08-24 1996-02-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-02-22 1999-08-24 2000-02-23 $7700.00 Window Closed / Lapsed

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