Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
A detector array for sensing electromagnetic radiation, comprising: a semiconducting layer of a first conductivity type; an array of junction regions of a second conductivity type in said semiconducting layer; an insulating layer disposed on said semiconducting layer; a plurality of conducting plates disposed on said insulating layer around each junction region, each plate establishing, in conjunction with said insulating layer and said semiconducting layer, a capacitor for creating an induced junction region adjoining said junction region; and a plurality of control lines, each conducting plate being connected to a control line for selectively creating said induced junction regions.
Claim 2
Dependent Claim
99 words
A detector array for sensing electromagnetic radiation, comprising: a semiconducting layer of a first conductivity type; an array of junction regions of a second conductivity type in said semiconducting layer; an insulating layer disposed on said semiconducting layer; a plurality of conducting plates disposed on said insulating layer around each junction region, each plate establishing, in conjunction with said insulating layer and said semiconducting layer, a capacitor for creating an induced junction region adjoining said junction region; and a plurality of control lines, each conducting plate being connected to a control line for selectively creating said induced junction regions.
Claim 3
Dependent Claim
50 words
The array of claim 1, further comprising a region of said second conductivity type in said semiconducting layer proximate to each induced junction region, said second conductivity type region establishing an auxiliary junction region such that each induced junction region connects an auxiliary junction region to said adjoining junction region.
Claim 4
Dependent Claim
21 words
The array of claim 1, further comprising a contact associated with each junction region for connecting said array to a multiplexer.
Claim 5
Dependent Claim
12 words
The array of claim 3, wherein said semiconducting layer further comprises HgCdTe.
Claim 6
Dependent Claim
25 words
The array of claim 4, wherein said HgCdTe layer exhibits a p type conductivity and said junction regions are doped to an n type conductivity.
Claim 7
Dependent Claim
25 words
The array of claim 4, wherein said HgCdTe layer exhibits an n type conductivity and said junction regions are doped to a p type conductivity.
Claim 8
Dependent Claim
172 words
A detector array for sensing electromagnetic radiation, comprising: a semiconducting layer of a first conductivity type; an array of junction regions of a second conductivity type in a major surface of said semiconducting layer; a first insulating layer disposed over said major surface; a plurality of conducting plates disposed on said first insulating layer around each junction region for creating, upon the application of an electrical potential between each plate and said semiconducting layer, an induced junction region in said semiconducting layer and adjoining said junction region; a second insulating layer disposed over said conducting plates and said first insulating layer; a contact through said first and second insulating layers associated with each junction region; a plurality of control lines disposed over said second insulating layer, each conducting plate being connected to a control line for selectively applying said electrical potential to said plate; a third insulating layer over said control lines, said contacts, and said second insulating layer; and an opening through said third insulating layer over each of said contacts.
Claim 9
Dependent Claim
172 words
A detector array for sensing electromagnetic radiation, comprising: a semiconducting layer of a first conductivity type; an array of junction regions of a second conductivity type in a major surface of said semiconducting layer; a first insulating layer disposed over said major surface; a plurality of conducting plates disposed on said first insulating layer around each junction region for creating, upon the application of an electrical potential between each plate and said semiconducting layer, an induced junction region in said semiconducting layer and adjoining said junction region; a second insulating layer disposed over said conducting plates and said first insulating layer; a contact through said first and second insulating layers associated with each junction region; a plurality of control lines disposed over said second insulating layer, each conducting plate being connected to a control line for selectively applying said electrical potential to said plate; a third insulating layer over said control lines, said contacts, and said second insulating layer; and an opening through said third insulating layer over each of said contacts.