US4725873A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor imaging device
Assignee: Junichi Nishizawa
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Filing: 1986-07-08
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Granted: 1988-02-16
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Expires: 2006-07-08
Abstract
Abstract A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a highly resistive channel region. First and second gate regions of the conduction type opposite that of the principal electrode regions is formed in contact with the channel region and used to control the current flow between the two principal electrode regions. A capacitor is formed on at least part of the first gate region, whereby carriers generated by light exitation are stored in the first gate region. The second gate region is formed surrounding the first gate region and is common to all pixels. This construction provides a high-level output signal and good isolation between pixels, with an attendant increase in blooming resistance.
Inventors
- 👤 Junichi Nishizawa
- 👤 Takashige Tamamushi
- 👤 Sobei Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:17
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
168 words
A semiconductor imaging device comprising a plurality of pixels each comprising a static induction transistor comprising: a pair of principal electrode regions of one conduction type disposed facing each other through a channel region formed of high resistivity semiconductor material; first and second gate regions of the other conduction type, formed in contact with said channel region, for controlling current flow between said two principal electrode regions; and a gate electrode formed over at least part of said gate region and separated from said first gate region by a dielectric layer, a capacitor being defined by said gate electrode, said dielectric layer and said first gate region, so that carriers generated by light excitation are stored in said first gate region, wherein said second gate region is formed surrounding said first gate region and is common to all pixels; wherein said pair of principal electrode regions constitute the two principal electrodes of said transistor and said first and second gate regions jointly constitute the gate of said transistor.
Claim 2
Dependent Claim
168 words
A semiconductor imaging device comprising a plurality of pixels each comprising a static induction transistor comprising: a pair of principal electrode regions of one conduction type disposed facing each other through a channel region formed of high resistivity semiconductor material; first and second gate regions of the other conduction type, formed in contact with said channel region, for controlling current flow between said two principal electrode regions; and a gate electrode formed over at least part of said gate region and separated from said first gate region by a dielectric layer, a capacitor being defined by said gate electrode, said dielectric layer and said first gate region, so that carriers generated by light excitation are stored in said first gate region, wherein said second gate region is formed surrounding said first gate region and is common to all pixels; wherein said pair of principal electrode regions constitute the two principal electrodes of said transistor and said first and second gate regions jointly constitute the gate of said transistor.
Claim 3
Dependent Claim
23 words
The semiconductor imaging device according to claim 1, wherein said second gate region is formed in an area notched into said channel region.
Claim 4
Dependent Claim
72 words
The device according to claim 1, wherein one of said two principal electrode regions is disposed between said two gate regions and extends along the entire length of each pixel, except for an area where said two gate regions are spaced by a greater distance than in other areas and said second gate region substantially but not completely surrounds said first gate region and said one of said two principal electrode regions.
Claim 5
Dependent Claim
17 words
The semiconductor imaging device according to claim 1, wherein said pixels are arranged in a two-dimensional array.
Claim 6
Dependent Claim
18 words
The semiconductor imaging device according to claim 1, wherein said pixels are formed in a one-dimensional linear arrangement.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-15 | 1991-08-17 | 1992-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-15 | 1995-08-17 | 1996-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-15 | 1999-08-17 | 2000-02-16 | $7700.00 | Window Closed / Lapsed |