US4427990A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photo-electric converter with insulated gate over p-n charge storage region
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1979-05-15
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Granted: 1984-01-24
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Expires: 1999-05-15
Abstract
Abstract A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.
Inventors
- 👤 Jun-ichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:14
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/285; H10F30/2863
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
316 words
A static induction transistor type semiconductor photo-electric converter having a substrate and including at least one unit, each unit comprising: a high-resistivity semiconductor region of one conductivity type having an impurity concentration of the order of 1×10 14 cm -3 and predetermined dimensions constituting at least one current channel having two ends; a pair of current electrode means comprising low-resistivity semiconductor regions of said one conductivity type and connected to said two ends of said current channel for receiving a main voltage from an external voltage source; a control electrode means formed adjacent to and surrounding said current channel for controlling current between said current electrode means, said control electrode means including a low resistivity semiconductor storage region of the other conductivity type opposite to said one conductivity type and having a low resistivity as compared to the resistivity of said high-resistivity region and formed adjacent to said current channel, and further including an insulating film formed on said low resistivity semiconductor storage region and a conductive electrode formed on said insulating film which comprises a storage capacitor, said control electrode means being capable of storing charge carriers of the other conductivity type opposite to said one conductivity type and thereby varying the potential thereof to control current between said current electrode means; a light receiving means formed in the neighborhood of said current channel for introducing external light at least into part of said semiconductor region; and at least one depletion layer formed in said semiconductor region extending from said control means to selectively pinch off said current channel due to said impurity concentration and predetermined dimensions, and forming a potential barrier in said current channel having a height in accordance with the potential of said control means and the potential of one of said current electrode means, said current electrode means and said current channel being configured substantially perpendicular with respect to said substrate.
Claim 2
Dependent Claim
316 words
A static induction transistor type semiconductor photo-electric converter having a substrate and including at least one unit, each unit comprising: a high-resistivity semiconductor region of one conductivity type having an impurity concentration of the order of 1×10 14 cm -3 and predetermined dimensions constituting at least one current channel having two ends; a pair of current electrode means comprising low-resistivity semiconductor regions of said one conductivity type and connected to said two ends of said current channel for receiving a main voltage from an external voltage source; a control electrode means formed adjacent to and surrounding said current channel for controlling current between said current electrode means, said control electrode means including a low resistivity semiconductor storage region of the other conductivity type opposite to said one conductivity type and having a low resistivity as compared to the resistivity of said high-resistivity region and formed adjacent to said current channel, and further including an insulating film formed on said low resistivity semiconductor storage region and a conductive electrode formed on said insulating film which comprises a storage capacitor, said control electrode means being capable of storing charge carriers of the other conductivity type opposite to said one conductivity type and thereby varying the potential thereof to control current between said current electrode means; a light receiving means formed in the neighborhood of said current channel for introducing external light at least into part of said semiconductor region; and at least one depletion layer formed in said semiconductor region extending from said control means to selectively pinch off said current channel due to said impurity concentration and predetermined dimensions, and forming a potential barrier in said current channel having a height in accordance with the potential of said control means and the potential of one of said current electrode means, said current electrode means and said current channel being configured substantially perpendicular with respect to said substrate.
Claim 3
Dependent Claim
28 words
A static induction transistor type semiconductor photo-electric converter according to claim 1, wherein: the converter includes a multiplicity of units of said converter and specific device isolation means.
Claim 4
Dependent Claim
22 words
A static induction transistor type semiconductor photo-electric converter according to claim 2, wherein: said multiplicity of units are arranged in one dimension.
Claim 5
Dependent Claim
34 words
A static induction transistor type semiconductor photo-electric converter according to claim 2, wherein: said multiplicity of units are arranged in a two-dimensional matrix shape having a plurality of rows and a plurality of columns.
Claim 6
Dependent Claim
37 words
A static induction transistor type semiconductor photo-electric converter according to claim 2, wherein: each said unit further comprises a switching transistor formed in said semiconductor chip and including said semiconductor storage region as one current electrode region.
Claim 7
Dependent Claim
69 words
A static induction transistor type semiconductor photo-electric converter according to claim 5, wherein: said switching transistor further comprises another current channel region formed of part of said high resistivity semiconductor region, another insulating film formed on said another current channel region, another conductive electrode formed on said another insulating layer, and another low resistivity semiconductor region of said other conductivity type formed adjacent to said another current channel region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-23 | 1987-07-25 | 1988-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-23 | 1991-07-25 | 1992-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-23 | 1995-07-25 | 1996-01-24 | $7700.00 | Window Closed / Lapsed |