US4725564A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body
Assignee: NXP BV
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Filing: 1987-01-07
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Granted: 1988-02-16
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Expires: 2007-01-07
Abstract
Abstract A method of manufacturing a semiconductor device, in which a layer (12) comprising silica and an oxide of a dopant is provided on a surface (9) of a silicon semiconductor body (1). The semiconductor body is then subjected to a heat treatment at a temperature at which transport of the dopant takes place from its oxide to the seminconductor body. The heat treatment is carried out at a first stage in an atmosphere comprising an inert gas to which up to 25% by volume of oxygen is added, at a second stage in an atmosphere of practically dry oxygen and then at a third stage in an atmosphere comprising oxygen and hydrogen. Thus, a doped zone is formed in the semiconductor body, while the surface is covered with an insulating layer of high quality.
Inventors
- 👤 Cornelis J. A. M. van Dalen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:06
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/92
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
114 words
A method of manufacturing a semiconductor device, in which a layer comprising silica and an oxide of a dopant is provided on a surface of a semiconductor body of silicon, after which the semiconductor body is subjected to a heat treatment at a temperature at which transport of the dopant takes place from its oxide to the semiconductor body, characterized in that the heat treatment is carried out at a first stage in an atmosphere comprising an inert gas to which about 25% by volume of oxygen is added, then at a second stage in an atmosphere of practically dry oxygen and thereafter at a third stage in an atmosphere comprising oxygen and hydrogen.
Claim 2
Independent Claim
114 words
A method of manufacturing a semiconductor device, in which a layer comprising silica and an oxide of a dopant is provided on a surface of a semiconductor body of silicon, after which the semiconductor body is subjected to a heat treatment at a temperature at which transport of the dopant takes place from its oxide to the semiconductor body, characterized in that the heat treatment is carried out at a first stage in an atmosphere comprising an inert gas to which about 25% by volume of oxygen is added, then at a second stage in an atmosphere of practically dry oxygen and thereafter at a third stage in an atmosphere comprising oxygen and hydrogen.
Claim 3
Dependent Claim
26 words
A method as claimed in claim 1, characterized in that a layer comprising silica and phosphorus pentoxide is provided on the surface of the semiconductor body.
Claim 4
Dependent Claim
36 words
A method as claimed in claim 2, characterized in that the layer comprising silica and phosphorus pentoxide is provided on the surface by application by spinning of a slurry comprising silica and phosphorus pentoxide in ethanol.
Claim 5
Dependent Claim
36 words
A method as claimed in claim 3, characterized in that the first stage of the heat treatment is carried out in an atmosphere of nitrogen to which 10 to 20% by volume of oxygen is added.
Claim 6
Dependent Claim
36 words
A method as claimed in claim 3 or 4, characterized in that during the first stage of the heat treatment phosphorus oxychloride (POCl 3 ) or phosphine (PH 3 ) is added to the inert atmosphere.
Claim 7
Dependent Claim
27 words
A method as claimed in claim 2, 3 or 4, characterized in that the heat treatment is carried out at a temperature of 925° to 1000° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-15 | 1991-08-17 | 1992-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-15 | 1995-08-17 | 1996-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-15 | 1999-08-17 | 2000-02-16 | $7700.00 | Window Closed / Lapsed |