Turbidimeter employing a semiconductor laser diode and a photodiode

Claim 2

A turbidimeter for measuring the turbidity of a test liquid, comprising a hollow housing having a lower end with an aperture, said housing being immersible in said test liquid to permit said test liquid to enter said housing through said aperture; a semiconductor laser diode mounted within said housing for emitting a laser light beam, said light beam being incident upon the test liquid within said housing; a semiconductor photodiode mounted within said housing for receiving light emanating from said test liquid within said housing, said photodiode generating an electrical signal corresponding to the turbidity of said test liquid; and means for compensating for the influence of temperature upon said semiconductor laser diode and said semiconductor photodiode.

Claim 3

A turbidimeter according to claim 1, which further comprises a transparent heat insulating member arranged within said housing.

Claim 4

A turbidimeter according to claim 2, wherein said semiconductor laser diode and photodiode are arranged within said transparent heat insulating member at the lower end of said housing.

Claim 5

A turbidimeter according to claim 2, which further comprises first and second light scattering plates, said first light scattering plate being interposed between said laser diode and said test liquid, and said second light scattering plate being interposed between said test liquid and said photodiode.

Claim 6

A turbidimeter according to claim 4, wherein said first and second light scattering plates are made of translucent quartz having a number of fine bubbles contained therein.

Claim 7

A turbidimeter according to claim 5, wherein the diameters of the fine bubbles in said translucent quartz are in the approximate range of 10 to 100 μm.

Claim 8

A turbidimeter according to claim 6, wherein the density of the fine bubbles in said translucent quartz is in the approximate range of 150 to 250/mm 2 .

Claim 9

A turbidimeter according to claim 1, wherein said hollow housing comprises a portion for securing the turbidimeter to a vessel containing said test liquid.

Claim 10

A turbidimeter for measuring the turbidity of a test liquid comprising a hollow housing having first and second ends with an aperture located at the first end thereof, said housing being immersible in said test liquid to permit said test liquid to enter said housing through said aperture; a semiconductor laser diode mounted within said housing at said second end for emitting a laser light beam; a first light quide member made of light transmitting and heat insulating material, said first light guide member being arranged within said housing for guiding the laser light beam emitted by said laser diode into the first end of said housing and making said laser light beam incident upon the test liquid within said housing; a second light guide member made of light transmitting and heat insulating material, said second light guide member being arranged within said housing for guiding light emanating from the test liquid within said housing into the second end of said housing; a semiconductor photodiode arranged within said housing at said second end for receiving the light emanating from said second light guide member, said photodiode producing a signal corresponding to the turbidity of the test liquid; and means for compensating for the influence of temperature upon said semiconductor laser diode and said semiconductor photodiode, said means further preventing the flow of current through said semiconductor laser diode and said semiconductor photodiode when said diode and photodiode are subjected to high temperatures such as during sterilization of said turbidimeter.

Claim 11

A turbidimeter for measuring the turbidity of a test liquid comprising a hollow housing having first and second ends with an aperture located at the first end thereof, said housing being immersible in said test liquid to permit said test liquid to enter said housing through said aperture; a semiconductor laser diode mounted within said housing at said second end for emitting a laser light beam; a first light quide member made of light transmitting and heat insulating material, said first light guide member being arranged within said housing for guiding the laser light beam emitted by said laser diode into the first end of said housing and making said laser light beam incident upon the test liquid within said housing; a second light guide member made of light transmitting and heat insulating material, said second light guide member being arranged within said housing for guiding light emanating from the test liquid within said housing into the second end of said housing; a semiconductor photodiode arranged within said housing at said second end for receiving the light emanating from said second light guide member, said photodiode producing a signal corresponding to the turbidity of the test liquid; and means for compensating for the influence of temperature upon said semiconductor laser diode and said semiconductor photodiode, said means further preventing the flow of current through said semiconductor laser diode and said semiconductor photodiode when said diode and photodiode are subjected to high temperatures such as during sterilization of said turbidimeter.

Claim 12

A turbidimeter according to claim 9, wherein each of said first and second light guide members is formed by a quartz prism.

Claim 13

A turbidimeter according to claim 9, wherein said first and second light guide members are covered with light reflection layers except for light inlet and exit surface portions thereof.

Claim 14

A turbidimeter according to claim 9, wherein said housing further comprises a portion for securing the turbidimeter to a vessel containing said test liquid.

Claim 15

A turbidimeter according to claim 12 wherein said means for compensating for the influence of temperature comprises a circuit for protecting said semiconductor laser diode and said semiconductor photodiode, said circuit cutting off the current flowing through at least one of said laser diode and semiconductor photodiode when the environment temperature exceeds a predetermined temperature.

Claim 16

A turbidimeter according to claim 13, wherein a potentiometer is provided in said circuit for adjusting said predetermined temperature.

Claim 17

A turbidimeter according to claim 12, further comprising means for keeping the light intensity of said semiconductor laser diode constant with variations in temperature.

Claim 18

A turbidimeter according to claim 12, further comprising means for compensating the effects of temperature, electromagnetic and electrostatic fields upon said laser diode and photodiode.

Claim 19

A turbidimeter for measuring the turbidity of a test liquid, comprising a hollow housing having first and second ends with an aperture located at the first end thereof, said housing being immersible in said test liquid to permit said test liquid to enter said housing through said aperture; a semiconductor laser diode mounted within said housing at said second end for emitting a laser light beam; a first light guide member made of light transmitting and heat insulating material, said first light guide member being arranged within said housing for guiding the laser light beam emitted by said laser diode into the first end of said housing and making said laser light beam incident upon the test liquid within said housing; a second light guide member made of light transmitting and heat insulating material, said second light guide member being arranged within said housing for guiding light emanating from the test liquid within said housing into the second end of said housing; a semiconductor photodiode arranged within said housing at said second end for receiving the light emanating from said second light guide member, said photodiode producing a signal corresponding to the turbidity of the test liquid; a light scattering means arranged between the first light guide member and the second light guide member within the housing the scattering the light beam transmitted therethrough; and means for compensating for the influence of temperature upon said semiconductor laser diode and said semiconductor photodiode, said means further preventing the flow of current through said semiconductor laser diode and said semiconductor photodiode when said diode and photodiode are subjected to high temperatures such as during sterilization of said turbidimeter.

Claim 20

A turbidimeter for measuring the turbidity of a test liquid, comprising a hollow housing having first and second ends with an aperture located at the first end thereof, said housing being immersible in said test liquid to permit said test liquid to enter said housing through said aperture; a semiconductor laser diode mounted within said housing at said second end for emitting a laser light beam; a first light guide member made of light transmitting and heat insulating material, said first light guide member being arranged within said housing for guiding the laser light beam emitted by said laser diode into the first end of said housing and making said laser light beam incident upon the test liquid within said housing; a second light guide member made of light transmitting and heat insulating material, said second light guide member being arranged within said housing for guiding light emanating from the test liquid within said housing into the second end of said housing; a semiconductor photodiode arranged within said housing at said second end for receiving the light emanating from said second light guide member, said photodiode producing a signal corresponding to the turbidity of the test liquid; a light scattering means arranged between the first light guide member and the second light guide member within the housing the scattering the light beam transmitted therethrough; and means for compensating for the influence of temperature upon said semiconductor laser diode and said semiconductor photodiode, said means further preventing the flow of current through said semiconductor laser diode and said semiconductor photodiode when said diode and photodiode are subjected to high temperatures such as during sterilization of said turbidimeter.

Claim 21

A turbidimeter according to claim 17, wherein said light scattering means comprises a first light scattering plate interposed between the first light guide member and the test liquid within the housing; and a second light scattering plate interposed between the test liquid within the housing and the second light guide member.

Claim 22

A turbidimeter according to claim 18, wherein said first and second light scattering plates are made of translucent quartz having a number of fine bubbles contained therein.

Claim 23

A turbidimeter according to claim 19, wherein the diameters of the fine bubbles in said translucent quartz are in the approximate range of 10 to 100 μm.

Claim 24

A turbidimeter according to claim 20, wherein the density of the fine bubbles in said translucent quartz is in the approximate range of 150 to 250/mm 2 .

Claim 25

A turbidimeter according to claim 19, which further comprises first and second layers applied on surfaces of said first and second light scattering plates, respectively, said surfaces facing the test liquid within said housing.

Claim 26

A turbidimeter according to claim 22, wherein said first and second layers are made of a material selected from a group consisting of silicon varnish, lacquer and glass having a low melting point.

Claim 27

A turbidimeter according to claim 18, wherein said first and second light scattering plates are made of opal glass.

Claim 28

A turbidimeter according to claim 17, wherein said housing comprises a portion for securing the turbidimeter to a vessel containing said test liquid.

Claim 29

A turbidimeter according to claim 17, wherein said first and second light guide members are formed by quartz prisms.

Claim 30

A turbidimeter according to claim 26, wherein said first and second quartz prisms are covered with light reflecting layers except for light inlet and exit surface portions thereof.

Claim 31

A turbidimeter according to claim 27, wherein said semiconductor laser diode is formed by a laser diode selected from the group consisting of Al--Ga--As, Ga--As--P and In--As--P laser diodes.

Claim 32

A turbidimeter according to claim 27, wherein said semiconductor photodiode is formed by a photodiode selected from a group consisting of silicon, germanium and PIN photodiodes.