Abstract The ease and versatility by which logic functions may be implemented in a semicustom CMOS gate array is substantially increased by disposing core cells within the gate array about a plane of mirror symmetry. Such a gate array is devised with mirror symmetry in two orthogonal directions. A memory design of general utility and with particular utility in a gate array is devised so as to operate with a programmable word length. The word length of the memory is programmed by choosing an appropriate integrated circuit metal mask option to be utilized in the memory circuit design at a data bus input and output mapping. In the event that the memory is entirely included within a large scale integrated circuit, such as a gate array, a circuit design is further devised for providing a self-test of the operability of such a fully included memory without the necessity of providing input/output pins communicating with the memory or other external test signals. The self-test is activated by applying a single external start signal at a corresponding single external circuit pin with an indication of failure at any point during a complete memory test cycle being coupled to a second external failure pin. A self-test protocol is utilized wherein an internal counter generates the addresses of each memory location and stores that address as data within the memory location and the inverse of the address as data. In each case, what was then written into the memory is compared to that which is later read from the memory to thereby validate operability of the memory.
An improved CMOS gate array formed in a semiconductor chip comprising: a plurality of core cells, each core cell comprising at least a first and second semiconductor device, said plurality of core cells disposed within said semiconductor chip in at least two rows in a first direction, said core cells in each row characterized by an internal configuration comprised of said first and second semiconductor devices, one said row having said internal configuration in a mirror symmetrical disposition within said semiconductor chip with respect to said adjacent row of core cells, said first direction thus defining a plane of mirror symmetry with respect to said adjacent rows of core cells, whereby implementation of complex logic functions within said gate array is substantially facilitated, and wherein adjacent core cells within each said row of core cells is repetitively duplicated within said row with respect to said internal configuration of said first and second semiconductor devices within each core cell disposed in said semiconductor chip, wherein said first and second semiconductor device comprising one core cell has a mirror symmetrical relationship with a corresponding first and second semiconductor device comprising a second core cell within said row, said mirror symmetry being established across a plane in a second direction perpendicular to said first direction after said plane of mirror symmetry is translated in the direction of said row by a distance equivalent to one of said first or second semiconductor devices.
Claim 2
Dependent Claim
239 words
An improved CMOS gate array formed in a semiconductor chip comprising: a plurality of core cells, each core cell comprising at least a first and second semiconductor device, said plurality of core cells disposed within said semiconductor chip in at least two rows in a first direction, said core cells in each row characterized by an internal configuration comprised of said first and second semiconductor devices, one said row having said internal configuration in a mirror symmetrical disposition within said semiconductor chip with respect to said adjacent row of core cells, said first direction thus defining a plane of mirror symmetry with respect to said adjacent rows of core cells, whereby implementation of complex logic functions within said gate array is substantially facilitated, and wherein adjacent core cells within each said row of core cells is repetitively duplicated within said row with respect to said internal configuration of said first and second semiconductor devices within each core cell disposed in said semiconductor chip, wherein said first and second semiconductor device comprising one core cell has a mirror symmetrical relationship with a corresponding first and second semiconductor device comprising a second core cell within said row, said mirror symmetry being established across a plane in a second direction perpendicular to said first direction after said plane of mirror symmetry is translated in the direction of said row by a distance equivalent to one of said first or second semiconductor devices.
Claim 3
Dependent Claim
95 words
The improved gate array of claim 1 wherein said first and second semiconductor devices comprise at least one P-channel and one N-channel device, the next adjacent semiconductor device in said first direction across said first plane of mirror symmetry having a channel with a matching doping type, said first semiconductor device adjacent said second plane of mirror symmetry along said second direction after said second plane of symmetry has been translated along the direction of said row by the width of one of said first or second semiconductor devices also having a matching channel type.