US4724416A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Voltage non-linear resistor and its manufacture
Assignee: NGK Insulators Ltd
•
Filing: 1987-02-27
•
Granted: 1988-02-09
•
Expires: 2007-02-27
Abstract
Abstract A voltage non-linear resistor excellent in lightning discharge current withstanding capability and electrical life performance against applied voltage comprises a disclike voltage non-linear element and a thin insulating covering layer integrally provided on the side surface of the element. In the resistor according to the invention, the element contains zinc oxides as main ingredient, 0.1-2.0% bismuth oxides, as Bi 2 O 3 , 0.1-2.0% cobalt oxides, as Co 2 O 3 , 0.1-2.0% manganese oxides, as MnO 2 , 0.1-2.0% antimony oxides, as Sb 2 O 3 , 0.1-2.0% chromium oxides, as Cr 2 O 3 , 0.1-2.0% nickel oxides, as NiO, 0.001-0.05% aluminum oxides, as Al 2 O 3 , 0.005-0.1% boron oxides, as B 2 O 3 , 0.001-0.05% silver oxides, as Ag 2 O and 1-3% silicon oxides, as SiO 2 , and the layer contains 80-96% silicon oxides, as SiO 2 , 2-7% bismuth oxides, as Bi 2 O 3 and antimony oxides for the remainder (% stands for mole %). The resistor of the invention preferably further has a thin glassy layer superimposed on the insulating covering layer. The resistors are advantageously adaptable to arrestors, surge absorbers used in high voltage power systems.
Inventors
- 👤 Masami Nakata
- 👤 Osamu Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:25
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/10; H01C7/12; H01C7/102; H01C7/105; H01C7/108; H01C7/112; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
180 words
A voltage non-linear resistor comprising a disclike voltage non-linear resistance element and a thin insulating covering layer integrally provided on a peripheral side surface of said disclike element, wherein said element comprises zinc oxides as a main ingredient, 0.1-2.0 mol. % bismuth oxides calculated as Bi 2 O 3 , 0.1-2.0 mol. % cobalt oxides calculated as Co 2 O 3 , 0.1-2.0 mol. % manganese oxides calculated as MnO 2 , 0.1-2.0 mol. % antimony oxides calculated as Sb 2 O 3 , 0.1-2.0 mol. % chromium oxides calculated as Cr 2 O 3 , 0.1-2.0 mol. % nickel oxides calculated as NiO, 0.001-0.05 mol. % aluminum oxides calculated as Al 2 O 3 , 0.005-0.1 mol. % boron oxides calculated as B 2 O 3 , 0.001-0.05 mol. % silver oxides calculated as Ag 2 O and 1-3 mol. % silicon oxides calculated as SiO 2 , and said layer comprises 80-96 mol. % silicon oxides calculated as SiO 2 , 2-7 mol. % bismuth oxides calculated as Bi 2 O 3 and antimony oxides for the remainder.
Claim 2
Dependent Claim
180 words
A voltage non-linear resistor comprising a disclike voltage non-linear resistance element and a thin insulating covering layer integrally provided on a peripheral side surface of said disclike element, wherein said element comprises zinc oxides as a main ingredient, 0.1-2.0 mol. % bismuth oxides calculated as Bi 2 O 3 , 0.1-2.0 mol. % cobalt oxides calculated as Co 2 O 3 , 0.1-2.0 mol. % manganese oxides calculated as MnO 2 , 0.1-2.0 mol. % antimony oxides calculated as Sb 2 O 3 , 0.1-2.0 mol. % chromium oxides calculated as Cr 2 O 3 , 0.1-2.0 mol. % nickel oxides calculated as NiO, 0.001-0.05 mol. % aluminum oxides calculated as Al 2 O 3 , 0.005-0.1 mol. % boron oxides calculated as B 2 O 3 , 0.001-0.05 mol. % silver oxides calculated as Ag 2 O and 1-3 mol. % silicon oxides calculated as SiO 2 , and said layer comprises 80-96 mol. % silicon oxides calculated as SiO 2 , 2-7 mol. % bismuth oxides calculated as Bi 2 O 3 and antimony oxides for the remainder.
Claim 3
Dependent Claim
127 words
A voltage non-linear resistor as claimed in claim 1, wherein said element comprises 0.5-1.2 mol. % bismuth oxides, as Bi 2 O 3 , 0.5-1.5 mol. % cobalt oxides, as Co 2 O 3 , 0.3-0.7 mol. % manganese oxides, as MnO 2 , 0.8-1.2 mol. % antimony oxides, as Sb 2 O 3 , 0.3-0.7 mol. % chromium oxides, as Cr 2 O 3 , 0.8-1.2 mol. % nickel oxides, as NiO, 0.002-0.005 mol. % aluminum oxides, as Al 2 O 3 , 0.001-0.08 mol. % boron oxides, as B 2 O 3 , 0.005-0.03 mol. % silver oxides, as Ag 2 O, and 1.5-2.0 mol. % silicon oxides, as SiO 2 , and said layer comprises 85-90 mol. % silicon oxides, as SiO 2 .
Claim 4
Dependent Claim
32 words
A voltage non-linear resistor as claimed in claim 1, wherein a boundary portion between said element and said layer comprises zinc silicate and a spinel Zn 1/3 Sb 2/3 O 4 .
Claim 5
Dependent Claim
18 words
A VOltage non-linear resistor as claimed in claim 1, wherein said layer has a thickness of 30-100 μm.
Claim 6
Dependent Claim
22 words
A voltage non-linear resistor as claimed in claim 1, which further comprises a glassy layer superimposed on the thin insulating covering layer.
Claim 7
Dependent Claim
19 words
A voltage non-linear resistor as claimed in claim 5, wherein the glassy layer has a thickness of 50-100 μm.
Claim 8
Dependent Claim
187 words
A process for manufacturing a voltage non-linear resistor, which comprises applying a mixture comprising 80-96 mol. % silicon oxides calculated as SiO 2 , 2-7 mol. % bismuth oxides calculated as Bi 2 O 3 and antimony oxides for the remainder on a peripheral side surface of a disclike voltage non-linear resistance element comprising zinc oxides as a main ingredient, 0.1-2.0 mol. % bismuth oxides calculated as Bi 2 O 3 , 0.1-2.0 mol. % cobalt oxides calculated as Co 2 O 3 , 0.1-2.0 mol. % manganese oxides calculated as MnO 2 , 0.1-2.0 mol. % antimony oxides calculated as Sb 2 O 3 , 0.1-2.0 mol. % chromium oxides calculated as Cr 2 O 3 , 0.1-2.0 mol. % nickel oxides calculated as NiO, 0.001-0.05 mol. % aluminum oxides calculated as Al 2 O 3 , 0.005-0.1 mol. % boron oxides calculated as B 2 O 3 , 0.001-0.05 mol. % silver oxides calculated as Ag 2 O and 1-3 mol. % silicon oxides calculated as SiO 2 , and then sintering the element, whereby an insulating covering layer is provided integrally on said surface.
Claim 9
Dependent Claim
187 words
A process for manufacturing a voltage non-linear resistor, which comprises applying a mixture comprising 80-96 mol. % silicon oxides calculated as SiO 2 , 2-7 mol. % bismuth oxides calculated as Bi 2 O 3 and antimony oxides for the remainder on a peripheral side surface of a disclike voltage non-linear resistance element comprising zinc oxides as a main ingredient, 0.1-2.0 mol. % bismuth oxides calculated as Bi 2 O 3 , 0.1-2.0 mol. % cobalt oxides calculated as Co 2 O 3 , 0.1-2.0 mol. % manganese oxides calculated as MnO 2 , 0.1-2.0 mol. % antimony oxides calculated as Sb 2 O 3 , 0.1-2.0 mol. % chromium oxides calculated as Cr 2 O 3 , 0.1-2.0 mol. % nickel oxides calculated as NiO, 0.001-0.05 mol. % aluminum oxides calculated as Al 2 O 3 , 0.005-0.1 mol. % boron oxides calculated as B 2 O 3 , 0.001-0.05 mol. % silver oxides calculated as Ag 2 O and 1-3 mol. % silicon oxides calculated as SiO 2 , and then sintering the element, whereby an insulating covering layer is provided integrally on said surface.
Claim 10
Dependent Claim
127 words
A process as claimed in claim 7, wherein said element comprises 0.5-1.2 mol. % bismuth oxides, as Bi 2 O 3 , 0.5 1 .5 mol. % cobalt oxides, as Co 2 O 3 , 0.3-0.7 mol. % manganese oxides, as MnO 2 , 0.8-1.2 mol. % antimony oxides, as Sb 2 O 3 , 0.3-0.7 mol. % chromium oxide, as Cr 2 O 3 , 0.8-1.2 mol. % nickel oxides, as NiO, 0.002-0.005 mol. % aluminum oxides, as Al 2 O 3 , 0.01-0.08 mol. % boron oxides, as B 2 O 3 , 0.005-0.03 mol. % silver oxides, as Ag 2 O, and 1.5-2.0 mol. % silicon oxides, as SiO 2 , and said mixture comprises 85-90 mol. % silicon oxides, as SiO 2 .
Claim 11
Dependent Claim
25 words
A process as claimed in claim 7, wherein said mixture is applied as a paste containing an organic binder with a thickness of 60-300 μm.
Claim 12
Dependent Claim
49 words
A process as claimed in claim 7, which further comprises applying a glass paste comprising glass powder admixed with an organic binder, with a thickness of 100-300 μm onto the insulating covering layer and heat-treating to form a glassy layer 50-100 μm thick superimposed upon the insulating covering layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-08 | 1991-08-10 | 1992-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-08 | 1995-08-10 | 1996-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-08 | 1999-08-10 | 2000-02-09 | $7700.00 | Window Closed / Lapsed |