Voltage-dependent resistor and method of making the same

Claim 2

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing, as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), to form a mixture consisting essentially of said zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) in the form of borosilicate glass, which is composed of 5 to 30 weight percent of boron oxide (B 2 O 3 ) and 70 to 95 weight percent of silicon oxide (SiO 2 ) with the other additives and zinc oxide.

Claim 3

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing, as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and a part of bismuth oxide (Bi 2 O 3 ) in the form of borosilicate bismuth glass, which is composed of 5 to 30 weight percent of boron oxide (B 2 O 3 ), 5 to 30 weight percent of silicon oxide (SiO 2 ) and 40 to 90 weight percent of bismuth oxide (Bi 2 O 3 ) with the other additives and zinc oxide.

Claim 4

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing, as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and a part of bismuth oxide (Bi 2 O 3 ) in the form of borosilicate bismuth glass, which is composed of 5 to 30 weight percent of boron oxide (B 2 O 3 ), 5 to 30 weight percent of silicon oxide (SiO 2 ) and 40 to 90 weight percent of bismuth oxide (Bi 2 O 3 ) with the other additives and zinc oxide.

Claim 5

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), to form a mixture consisting essentially of said zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and a part of bismuth oxide (Bi 2 O 3 ) and cobalt oxide (Co 2 O 3 ) in the form of borosilicate bismuth glass including cobalt oxide, which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 40 to 85 weight percent of bismuth oxide (Bi 2 O 3 ) and 2 to 10 weight percent of cobalt oxide (Co 2 O 3 ) with the other additives and zinc oxide.

Claim 6

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), to form a mixture consisting essentially of said zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and a part of bismuth oxide (Bi 2 O 3 ) and cobalt oxide (Co 2 O 3 ) in the form of borosilicate bismuth glass including cobalt oxide, which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 40 to 85 weight percent of bismuth oxide (Bi 2 O 3 ) and 2 to 10 weight percent of cobalt oxide (Co 2 O 3 ) with the other additives and zinc oxide.

Claim 7

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.0005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (d) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) in the form of borosilicate glass including silver oxide (Ag 2 O), which is composed of 5 to 30 weight percent of boron oxide (B 2 O 3 ), 40 to 90 weight percent of silicon oxide (SiO 2 ) and 3 to 25 weight percent of silver oxide (Ag 2 O) with the other additives and zinc oxide.

Claim 8

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.0005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (d) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) in the form of borosilicate glass including silver oxide (Ag 2 O), which is composed of 5 to 30 weight percent of boron oxide (B 2 O 3 ), 40 to 90 weight percent of silicon oxide (SiO 2 ) and 3 to 25 weight percent of silver oxide (Ag 2 O) with the other additives and zinc oxide.

Claim 9

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) and a part of bismuth oxide (Bi 2 O 3 ) in the form of borosilicate bismuth glass including silver oxide (Ag 2 O), which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 45 to 85 weight percent of bismuth oxide (Bi 2 O 3 ) and 3 to 25 weight percent of siliver oxide (Ag 2 O) with the other additives and zinc oxide.

Claim 10

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing as the main constituent, zinc oxide (ZnO) and, as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.0 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture into a resistor body; (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) and a part of bismuth oxide (Bi 2 O 3 ) in the form of borosilicate bismuth glass including silver oxide (Ag 2 O), which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 45 to 85 weight percent of bismuth oxide (Bi 2 O 3 ) and 3 to 25 weight percent of siliver oxide (Ag 2 O) with the other additives and zinc oxide.

Claim 11

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing, as the main constituent, zinc oxide (ZnO) and the balance as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.1 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.0005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture to form a resistor body; and, (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) and a part of bismuth oxide (Bi 2 O 3 ) and cobalt oxide (Co 2 O 3 ) in the form of borosilicate bismuth glass including silver oxide (Ag 2 O) and cobalt oxide (Co 2 O 3 ), which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 45 to 85 weight percent of bismuth oxide (Bi 2 O 3 ), 3 to 25 weight percent of silver oxide (Ag 2 O) and 2 to 10 weight percent of cobalt oxide (Co 2 O 3 ) with the other additives and zinc oxide.

Claim 12

In a process for making a bulk-type voltage-dependent resistor consisting essentially of: (a) admixing, as the main constituent, zinc oxide (ZnO) and the balance as additives, 0.1 to 3.0 mole percent of bismuth oxide (Bi 2 O 3 ), 0.1 to 3.0 mole percent of cobalt oxide (Co 2 O 3 ), 0.1 to 3.0 mole percent of manganese oxide (MnO 2 ), 0.1 to 3.1 mole percent of antimony oxide (Sb 2 O 3 ), 0.05 to 1.5 mole percent of chromium oxide (Cr 2 O 3 ), 0.005 to 0.3 mole percent of boron oxide (B 2 O 3 ), at least one member selected from the group consisting of 0.0005 to 0.025 mole percent of aluminum oxide (Al 2 O 3 ) and 0.0005 to 0.025 mole percent of gallium oxide (Ga 2 O 3 ), and at least one member selected from the group consisting of 0.1 to 3.0 mole percent of nickel oxide (NiO) and 0.1 to 10.0 mole percent of silicon oxide (SiO 2 ), and 0.0005 to 0.3 mole percent of silver oxide (Ag 2 O), to form a mixture consisting essentially of zinc oxide and said additives; (b) pressing said mixture to form a resistor body; and, (c) sintering said resistor body; and, (d) applying electrodes to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to pressing, admixing the entire amount of boron oxide (B 2 O 3 ) and silver oxide (Ag 2 O) and a part of bismuth oxide (Bi 2 O 3 ) and cobalt oxide (Co 2 O 3 ) in the form of borosilicate bismuth glass including silver oxide (Ag 2 O) and cobalt oxide (Co 2 O 3 ), which is composed of 5 to 25 weight percent of boron oxide (B 2 O 3 ), 5 to 25 weight percent of silicon oxide (SiO 2 ), 45 to 85 weight percent of bismuth oxide (Bi 2 O 3 ), 3 to 25 weight percent of silver oxide (Ag 2 O) and 2 to 10 weight percent of cobalt oxide (Co 2 O 3 ) with the other additives and zinc oxide.