US4724356A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Infrared display device
Assignee: Lockheed Martin Corp
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Filing: 1986-10-10
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Granted: 1988-02-09
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Expires: 2006-10-10
Abstract
Abstract A matrix of infrared generating cells is disclosed. Each cell includes a resistive element formed over and traversing a cavity formed on the surface of the supporting semiconductor substrate.
Inventors
- 👤 Max Daehler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:31
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; F; F41; F41J; F41J2/00; F41J2/02; G; G01; G01J; G01J5/00; G01J5/52; G01J5/53; H01; H01K; H01K1/00; H01K1/02; H01K1/14; H01K1/18
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
68 words
A display device comprising: a semiconductor substrate having a first surface portion having an inverted pyramid cavity formed in said first surface; an infrared generating cell comprising a resistive element and a diode; said diode is formed on the first surface of said semiconductor substrate adjacent to said inverted pyramid cavity and is connected to said resistive element; and wherein said resistive element bridges said inverted pyramid cavity.
Claim 2
Dependent Claim
68 words
A display device comprising: a semiconductor substrate having a first surface portion having an inverted pyramid cavity formed in said first surface; an infrared generating cell comprising a resistive element and a diode; said diode is formed on the first surface of said semiconductor substrate adjacent to said inverted pyramid cavity and is connected to said resistive element; and wherein said resistive element bridges said inverted pyramid cavity.
Claim 3
Dependent Claim
82 words
A display device array comprising: a semiconductor substrate having a first surface portion including an array of inverted pyramid cavities formed in said first surface; a plurality of infrared generating cells, each infrared generating cell comprising a resistive element and a diode; each of said diodes formed on the first surface of said semiconductor substrate adjacent to an inverted pyramid cavity; each of said diodes connected to a resistive element; each of said resistive elements bridging one of said inverted pyramid cavities.
Claim 4
Dependent Claim
82 words
A display device array comprising: a semiconductor substrate having a first surface portion including an array of inverted pyramid cavities formed in said first surface; a plurality of infrared generating cells, each infrared generating cell comprising a resistive element and a diode; each of said diodes formed on the first surface of said semiconductor substrate adjacent to an inverted pyramid cavity; each of said diodes connected to a resistive element; each of said resistive elements bridging one of said inverted pyramid cavities.
Claim 5
Independent Claim
114 words
The method of fabricating a display device on a semiconductor, said method comprising the following steps: coating a silicon dioxide layer on a first surface of said semiconductor; etching at least one first window in said silicon dioxide layer to outline the desired dimensions and shape of the desired resistive element; doping the area defined by said window to form a resistive element; oxidizing said first surface of said semiconductor, including said window; opening at least one second window in said oxidized layer to outline a square superimposed on said resistive element; etching the area defined by said second window to form an inverted pyramid-shaped cavity; and, establishing electrical connections to said resistive elements.
Claim 6
Independent Claim
114 words
The method of fabricating a display device on a semiconductor, said method comprising the following steps: coating a silicon dioxide layer on a first surface of said semiconductor; etching at least one first window in said silicon dioxide layer to outline the desired dimensions and shape of the desired resistive element; doping the area defined by said window to form a resistive element; oxidizing said first surface of said semiconductor, including said window; opening at least one second window in said oxidized layer to outline a square superimposed on said resistive element; etching the area defined by said second window to form an inverted pyramid-shaped cavity; and, establishing electrical connections to said resistive elements.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-08 | 1991-08-10 | 1992-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-08 | 1995-08-10 | 1996-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-08 | 1999-08-10 | 2000-02-09 | $7700.00 | Window Closed / Lapsed |