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Conductive layer deposition method with a microwave enhanced CVD system

Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-10-09
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Granted: 1988-02-09
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Expires: 2006-10-09
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Abstract

Abstract An improved deposition method for conductive layer is shown. Adverse effects of conductive deposited material on a wall of a reaction chamber is overcome by provision of a multi-chambered system. One chamber is devoted to a resonance space in which process gas is excited by ECR. Another chamber is devoted to a reaction space in which productive gas is decomposed to proceed the deposition.

Inventors

  • 👤 Shunpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 10:19
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/138; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/50; C23C16/511; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 89 words
A conductive layer deposition method comprising: a step of introducing process gas into a first chamber; a step of exciting said process gas by irradiating with microwave under existance of magnetic field; a step of introducing productive gas into a second chamber; a step of introducing the said excited process gas from said first chamber into the second chamber; a step of energizing said productive gas by mixing with said excited process gas; and a step of depositing a conductive layer produced from a chemical reaction of productive gas.
Claim 2
Dependent Claim 89 words
A conductive layer deposition method comprising: a step of introducing process gas into a first chamber; a step of exciting said process gas by irradiating with microwave under existance of magnetic field; a step of introducing productive gas into a second chamber; a step of introducing the said excited process gas from said first chamber into the second chamber; a step of energizing said productive gas by mixing with said excited process gas; and a step of depositing a conductive layer produced from a chemical reaction of productive gas.
Claim 3
Dependent Claim 25 words
A method of claim 1 wherein said chemical reaction is set on with said productive gas and at least a part of said process gas.
Claim 4
Dependent Claim 20 words
A method of claim 1 wherein said process gas exciting step is carried out according to an electron cyclotron resonance.
Claim 5
Dependent Claim 12 words
A method of claim 1 wherein said process gas is argon gas.
Claim 6
Dependent Claim 43 words
A method of claim 1 wherein said reaction is set on at least two gaseous compounds, some of the compounds being introduced into said first chamber as said process gas and the rest being introduced into said second chamber as said productive gas.
Claim 7
Dependent Claim 18 words
A method of claim 1 wherein said productive gas or said process gas is diluted with inert gas.
Claim 8
Dependent Claim 27 words
A method of claim 1 wherein at least one component of said conductive layer comes from a solid ion source which is disposed in said first chamber.
Claim 9
Dependent Claim 14 words
A method of claim 1 wherein said conductive layer is a conductive transparent layer.
Claim 10
Dependent Claim 14 words
A method of claim 8 wherein said transparent layer is a transparent oxide layer.
Claim 11
Dependent Claim 19 words
A method of claim 9 wherein said oxide layer is a indium tin oxide layer or a tin oxide.
Claim 12
Dependent Claim 27 words
A method of claim 8 wherein said transparent layer is made of tin nitride, molybdenum, titanium, tungsten, aluminium, MoSi 2 , TiSi 2 or WSi 2 .

References Cited (Backward Citations)

US4568578A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-02-08 1991-08-10 1992-02-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-02-08 1995-08-10 1996-02-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-02-08 1999-08-10 2000-02-09 $7700.00 Window Closed / Lapsed

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