US4722088A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser for high optical output power with reduced mirror heating
Assignee: Siemens AG
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Filing: 1985-09-06
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Granted: 1988-01-26
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Expires: 2005-09-06
Abstract
Abstract The semiconductor laser, which can be either electrically or optically pumped, characterized by quantum well structure for the body and by having a distance of the respective mirror structures from the end of the laser active zone which is dimensioned within tight limits. The structure provides a semiconductor laser in which problems with destruction or aging of the reflective properties of the mirror structure due to heating are reduced.
Inventors
- 👤 Hans D. Wolf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/04; H01S5/041; H01S5/30; H01S5/34; H01S5/3428
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
In a semiconductor strip laser having a semiconductor body with a layer format, said body having resonator mirror structures being provided on opposite end surfaces of the body and a laser active zone generating a laser radiation in response to pumping being disposed between the mirror structures and having ends spaced inward at a distance from each mirror structure, the improvements comprising the layer format of the seimiconductor body comprising a quantum well structure and the respective distances between the ends of the laser active zone and the respective mirror structures in the semiconductor body being in a range of 5 to 30 μm.
Claim 2
Dependent Claim
104 words
In a semiconductor strip laser having a semiconductor body with a layer format, said body having resonator mirror structures being provided on opposite end surfaces of the body and a laser active zone generating a laser radiation in response to pumping being disposed between the mirror structures and having ends spaced inward at a distance from each mirror structure, the improvements comprising the layer format of the seimiconductor body comprising a quantum well structure and the respective distances between the ends of the laser active zone and the respective mirror structures in the semiconductor body being in a range of 5 to 30 μm.
Claim 3
Dependent Claim
52 words
In a semiconductor strip laser according to claim 1, wherein the laser is an electrically pumped laser and the body has an electrode coating, wherein the respective distances between the ends of the laser active zones and the mirror structures are defined by length limitations of the electrode coating on the body.
Claim 4
Dependent Claim
53 words
In a semiconductor strip laser according to claim 1, wherein the laser is an optically pumped laser and wherein the distances between the ends of the mirror structure and the ends of the laser active zone are defined by the length of a strip of the semiconductor body being irradiated with optical energy.
Claim 5
Dependent Claim
22 words
In a semiconductor strip laser according to claim 3, wherein the length of the strip being irradiated is limited by a mask.
Claim 6
Dependent Claim
20 words
In a semiconductor strip laser according to claim 1, wherein the respective distances are in a range of 10-15 μm.
Claim 7
Dependent Claim
39 words
In a semiconductor strip laser according to claim 5, wherein the laser is a electrically pumped laser and having electrode coatings and the length of the active zone is determined by a length of one of the electrode coating.
Claim 8
Dependent Claim
39 words
In a semiconductor strip laser according to claim 5, wherein the laser is an optically pumped laser and the length of the laser active zone is determined by the length of the semiconductor body being irradiated with optical energy.
Claim 9
Dependent Claim
24 words
In a semiconductor laser according to claim 7, wherein the length of the body being irradiated by optical energy is determined by a mask.
Claim 10
Dependent Claim
35 words
In a semiconductor laser according to claim 1, wherein the respective distances between the ends of the laser active zone and the each mirror structure amounts to about three diffusion lengths of a charge carrier.
Claim 11
Dependent Claim
42 words
In a semiconductor strip laser according to claim 9, wherein the laser is an optically pumped laser and the length of the laser active zone is determined by the length of a strip of the semiconductor body being irradiated with optical energy.
Claim 12
Dependent Claim
39 words
In a semiconductor strip laser according to claim 9, wherein the laser is a electrically pumped laser having an electrode coating and wherein the length of the laser active zone is determined by the length of the electrode coating.
Claim 13
Dependent Claim
39 words
In a semiconductor laser according to claim 11, wherein the respective distance between the mirror structure and the end of the laser active zone amounts to an additional 2 μm to the three diffusion lengths of a charge carrier.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-25 | 1991-07-27 | 1992-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-25 | 1995-07-27 | 1996-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-25 | 1999-07-27 | 2000-01-26 | $7700.00 | Window Closed / Lapsed |