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US4720993A
Expired / Lapsed
US
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Semiconducting oxygen sensors
Assignee: Commonwealth Scientific and Industrial Research Organisation
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Filing: 1985-10-14
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Granted: 1988-01-26
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Expires: 2005-10-14
Abstract
Abstract PCT No. PCT/AU85/00247 Sec. 371 Date Jun. 16, 1986 Sec. 102(e) Date Jun. 16, 1986 PCT Filed Oct. 14, 1985 PCT Pub. No. WO86/02731 PCT Pub. Date May 9, 1986.A Sensor for measuring oxygen partial pressures in hot gases includes a semiconducting nonstoichiometric oxide material in the form of a solid solution in uranium dioxide UO2 of at least one other metal oxide having an oxygen/metal (O/M) ratio of less than two and a uranium/other metal (U/M) ratio such that the material has n-type conductivity. The sensor further includes at least one pair of electrodes contacting the nonstoichiometric oxide material at spaced apart locations for connection to a device for determining the resistance of the material between the electrodes.
Inventors
- 👤 Sukhyinder P. S. Badwal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:33
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/406; G01N27/407; G01N27/4073
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
78 words
A sensor for the measurement of oxygen partial pressures in hot gases comprising a semiconducting nonstroichiometric oxide sensing material and a pair of mutually spaced electrodes in contact with said material, the said material being in the form of a solid solution in uranium dioxide of at least one other metal oxide having an oxygen/metal (O/M) atom ratio of less than two, and the uranium/other metal (U/M) atom ratio being such that the said material has n-type conductivity.
Claim 2
Dependent Claim
78 words
A sensor for the measurement of oxygen partial pressures in hot gases comprising a semiconducting nonstroichiometric oxide sensing material and a pair of mutually spaced electrodes in contact with said material, the said material being in the form of a solid solution in uranium dioxide of at least one other metal oxide having an oxygen/metal (O/M) atom ratio of less than two, and the uranium/other metal (U/M) atom ratio being such that the said material has n-type conductivity.
Claim 3
Dependent Claim
21 words
A sensor according to claim 1, wherein the uranium/other metal (U/M) atom ratio is within the range of 0.34/0.66 to 0.25/0.75.
Claim 4
Dependent Claim
27 words
A sensor according to claim 1 or claim 2, further comprising an additional pair of mutually spaced electrodes in contact with said semiconducting nonstoichiometric oxide sensing material.
Claim 5
Dependent Claim
23 words
A sensor according to claim 1 or claim 2, wherein the said other metal oxide has an oxygen/metal (O/M) atom ratio of 3/2.
Claim 6
Dependent Claim
22 words
A sensor according to claim 1 or claim 2, wherein the said other metal is Y, Gd, Dy, Pr, La, or Nd.
Claim 7
Dependent Claim
43 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material is mixed with at least one noble metal selected from the group consisting of platinum, gold, silver, palladium and alloys of at least two of these metals.
Claim 8
Dependent Claim
49 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material contains a proportion of free material selected from the group consisting of uranium dioxide, at least one other oxide component of the solid solution, and ordered phases in the uranium oxide-metal oxide-oxygen system.
Claim 9
Dependent Claim
27 words
A sensor according to claim 1 or 2, further comprising at least one phase selected form the group consisting of insulator, ionic conductor, and other semiconductor phases.
Claim 10
Dependent Claim
25 words
A senosor according to claim 1 or claim 2, wherein the semiconducting nonstoichometric oxide sensing material is applied as a layer on an insulator substrate.
Claim 11
Dependent Claim
29 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material is applied as a layer on an at least partly sintered insulator substrate.
Claim 12
Dependent Claim
26 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material is applied in a mixture with glass to a substrate.
Claim 13
Dependent Claim
27 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material is bonded to a substrate by measn of an intermediate layer.
Claim 14
Dependent Claim
26 words
A sensor according to claim 1 or claim 2, wherein the semiconducting nonstoichiometric oxide sensing material is in the form of a porous disc or block.
Claim 15
Dependent Claim
15 words
A sensor according to claim 1 or claim 2, further comprising a resistance measuring device.
Claim 16
Dependent Claim
32 words
A sensor according to claim 1 or claim 2, further comprising a resistance measuring device which comprises a constant current source to pass current and a voltmeter to measure the voltage signal.
Claim 17
Dependent Claim
22 words
A sensor according to claim 1 or claim 2, further comprising a temperature measuring device for measuring the temperature of the sensor.
Claim 18
Dependent Claim
20 words
A sensor according to claim 1 or claim 2, further comprising a thermocouple for measuring the temperature of the sensor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-25 | 1991-07-27 | 1992-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-25 | 1995-07-27 | 1996-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-25 | 1999-07-27 | 2000-01-26 | $7700.00 | Window Closed / Lapsed |