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Process for preparation of high-type silicon nitride powder

Assignee: Tosoh Corp
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Filing: 1986-02-14
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Granted: 1987-12-29
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Expires: 2006-02-14
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Abstract

Abstract A high alpha -type silicon nitride powder is prepared by thermally decomposing a mixture of a crystalline silicon nitride powder having an oxygen content of at least 1.0% by weight and a nitrogen-containing silane compound.

Inventors

  • 👤 Kiyoshi Kasai
  • 👤 Takaaki Tsukidate
  • 👤 Toshihiko Arakawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 21:51
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C01; C01B; C01B21/00; C01B21/06; C01B21/068; C01P; C01P2002/00; C01P2002/04; C01P2004/00; C01P2004/60; C01P2004/62; C01P2006/00; C01P2006/10

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 108 words
A process of preparing crystalline silicon nitride by the thermal decomposition of a nitrogen-containing silane compound, said process comprising the steps of: forming a powder or molded body having a powder bulk density of at least 0.1 g/cm 3 expressed in terms of silicon, from a mixture of a crystalline silicon nitride powder having an oxygen content of at least 1.0% by weight and a nitrogen-containing silane compound, and thermally decomposing said mixture while said mixture is heated at a temperature-elevating rate of at least 15° C. per minute in a temperature range of from 1,350° C. to 1,550° C., to obtain thereby an α-type silicon nitride powder.
Claim 2
Dependent Claim 108 words
A process of preparing crystalline silicon nitride by the thermal decomposition of a nitrogen-containing silane compound, said process comprising the steps of: forming a powder or molded body having a powder bulk density of at least 0.1 g/cm 3 expressed in terms of silicon, from a mixture of a crystalline silicon nitride powder having an oxygen content of at least 1.0% by weight and a nitrogen-containing silane compound, and thermally decomposing said mixture while said mixture is heated at a temperature-elevating rate of at least 15° C. per minute in a temperature range of from 1,350° C. to 1,550° C., to obtain thereby an α-type silicon nitride powder.
Claim 3
Dependent Claim 38 words
The process of preparing crystalline silicon nitride according to claim 1, wherein the oxygen content of the crystalline silicon nitride powder mixed with the nitrogen-containing silane compound is in the range of from 1.0 to 3.0% by weight.
Claim 4
Dependent Claim 44 words
The process of preparing crystalline silicon nitride according to claim 1, wherein the amount of the crystalline silicon nitride in the mixture of the crystalline silicon nitride powder and the nitrogen-containing silane compound is in the range of from 0.1 to 15% by weight.
Claim 5
Dependent Claim 37 words
The process of preparing crystalline silicon nitride according to claim 1, wherein the mixture of the crystalline silicon nitride powder and the nitrogen-containing silane compound is heated at 1,400° C. to 1,700° C. to effect thermal decomposition.
Claim 6
Dependent Claim 26 words
The process of preparing crystalline silicon nitride according to claim 1, wherein the amount of α-type silicon nitride powder obtained is at least 93% by weight.

References Cited (Backward Citations)

US4341874A Cited
DE3235304A1 Cited
JPS5921507A Cited
JPS61122167A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-12-28 1991-06-29 1991-12-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-12-28 1995-06-29 1995-12-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-12-28 1999-06-29 1999-12-29 $7700.00 Window Closed / Lapsed

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