US4714845A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low offset voltage follower circuit
Assignee: STMicroelectronics SRL
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Filing: 1986-11-28
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Granted: 1987-12-22
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Expires: 2006-11-28
Abstract
Abstract A low offset voltage follower circuit includes substantially identical first and second N-channel MOS transistors having their source electrodes connected to a negative terminal of a supply voltage source via a third N-channel MOS transistor whose gate electrode is connected to a first reference voltage, and having their drain electrodes respectively connected to a positive terminal of the supply voltage source via fourth and fifth P-channel MOS transistors whose gate electrodes are connected to a second reference voltage. The gate electrode of the first transistor forms an input terminal of the follower circuit and the gate and drain electrodes of the second transistor are connected together to form an output terminal of the follower circuit. The follower circuit further includes a sixth P-channel MOS transistor having its source, gate and drain electrodes respectively connected to the drain electrodes of the first transistor and the source electrodes of the first and second transistors and the negative terminal of the supply voltage source.
Inventors
- 👤 Daniele Devecchi
- 👤 Guido Torelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:18
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/50; H03F3/505
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
297 words
A low offset voltage follower circuit having a substantially unity voltage gain comprising at least one input terminal for connection to a voltage generator and at least one output terminal for connection to a load, and using complementary MOS type transistors, said voltage follower circuit comprising first, second and third transistors having a first type of conductivity, and fourth, fifth and sixth transistors having a second type of conductivity which is opposite to said first type of conductivity, said first and second transistors having source electrodes connected to a drain electrode of said third transistor, said third transistor having source and gate electrodes which are respectively connected to a first terminal of a supply voltage source and to a first voltage reference means for keeping said gate electrode at a constant potential with respect to said first terminal of said supply voltage source, a gate electrode of the first transistor forming said input terminal of said follower circuit, said fourth and fifth transistors having source electrodes connected to a second terminal of said supply voltage source, said fourth and fifth transistors having gate electrodes connected to a second voltage reference means for keeping said gate electrodes at a constant potential with respect to said second terminal of said supply voltage source, said fourth transistor having a drain electrode connected to a drain electrode of said first transistor and to a source electrode of said sixth transistor, said sixth transistor having drain and gate electrodes which are respectively connected to said first terminal of said supply voltage source and to source electrodes of said first and second transistors, said second transistor having drain and gate electrodes connected to a drain electrode of said fifth transistor at a circuit node which forms said output terminal of said follower circuit.
Claim 2
Dependent Claim
297 words
A low offset voltage follower circuit having a substantially unity voltage gain comprising at least one input terminal for connection to a voltage generator and at least one output terminal for connection to a load, and using complementary MOS type transistors, said voltage follower circuit comprising first, second and third transistors having a first type of conductivity, and fourth, fifth and sixth transistors having a second type of conductivity which is opposite to said first type of conductivity, said first and second transistors having source electrodes connected to a drain electrode of said third transistor, said third transistor having source and gate electrodes which are respectively connected to a first terminal of a supply voltage source and to a first voltage reference means for keeping said gate electrode at a constant potential with respect to said first terminal of said supply voltage source, a gate electrode of the first transistor forming said input terminal of said follower circuit, said fourth and fifth transistors having source electrodes connected to a second terminal of said supply voltage source, said fourth and fifth transistors having gate electrodes connected to a second voltage reference means for keeping said gate electrodes at a constant potential with respect to said second terminal of said supply voltage source, said fourth transistor having a drain electrode connected to a drain electrode of said first transistor and to a source electrode of said sixth transistor, said sixth transistor having drain and gate electrodes which are respectively connected to said first terminal of said supply voltage source and to source electrodes of said first and second transistors, said second transistor having drain and gate electrodes connected to a drain electrode of said fifth transistor at a circuit node which forms said output terminal of said follower circuit.
Claim 3
Dependent Claim
22 words
A voltage follower circuit as recited in claim 1, wherein said first and second transistors have substantially identical physical and electrical characteristics.
Claim 4
Dependent Claim
22 words
A voltage follower circuit as recited in claim 1, wherein said first and second transistors have substrate electrodes which are connected together.
Claim 5
Dependent Claim
29 words
A voltage follower circuit as recited in claim 1, wherein biasing conditions of the circuit for said first and second transistors are arranged so as to be substantially identical.
Claim 6
Dependent Claim
32 words
A voltage follower circuit as recited in claim 1 said first, second and third transistors are of the N-channel type, and said fourth, fifth and sixth transistors are of the P-channel type.
Claim 7
Dependent Claim
32 words
A voltage follower circuit as recited in claim 2 said first, second and third transistors are of the N-channel type, and said fourth, fifth and sixth transistors are of the P-channel type.
Claim 8
Dependent Claim
32 words
A voltage follower circuit as recited in claim 3 said first, second and third transistors are of the N-channel type, and said fourth, fifth and sixth transistors are of the P-channel type.
Claim 9
Dependent Claim
32 words
A voltage follower circuit as recited in claim 4 said first, second and third transistors are of the N-channel type, and said fourth, fifth and sixth transistors are of the P-channel type.
References Cited (Backward Citations)
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US4598215A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-21 | 1991-06-22 | 1991-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-21 | 1995-06-22 | 1995-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-21 | 1999-06-22 | 1999-12-22 | $7700.00 | Window Closed / Lapsed |