Electronic device manufacturing methods

Claim 1

A method for the manufacture of an electronic device which is provided with at least a transparent conductive layer, comprising the steps of: forming a transparent conductive layer on a transparent substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators, or on a non-single-crystal semi-conductor layer member, wherein the transparent conductive layer member has a thickness of two μm or less and consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides, and wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semi-conductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the transparent conductive layer member to irradiation by one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer member, thereby forming the transparent conductive layer which has a thickness of 2 μm or less and consists principally of the sublimable metallic oxide or nitride on the substrate or the non-single-crystal semi-conductor layer member.

Claim 2

A method for the manufacture of an electronic device which is provided with at least a transparent conductive layer, comprising the steps of: forming a transparent conductive layer on a transparent substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators, or on a non-single-crystal semi-conductor layer member, wherein the transparent conductive layer member has a thickness of two μm or less and consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides, and wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semi-conductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the transparent conductive layer member to irradiation by one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer member, thereby forming the transparent conductive layer which has a thickness of 2 μm or less and consists principally of the sublimable metallic oxide or nitride on the substrate or the non-single-crystal semi-conductor layer member.

Claim 3

A method for the manufacture of an electronic device which is provided with at least a non-transparent conductive layer, comprising the steps of: forming a non-transparent conductive layer member on a substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators, or on a non-single-crystal semi-conductor layer member, wherein the non-transparent conductive layer consists principally of a metal selected from the group consisting of sublimable and non-sublimable metals, and wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semi-conductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the non-transparent conductive layer member to irradiation one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer member, thereby forming the non-transparent conductive layer which has a thickness of 2 μm or less and consists principally of the sublimable or non-sublimable metal on the substrate or the non-single-crystal semi-conductor layer member.

Claim 4

A method for the manufacture of an electronic device which is provided with at least a non-transparent conductive layer, comprising the steps of: forming a non-transparent conductive layer member on a substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators, or on a non-single-crystal semi-conductor layer member, wherein the non-transparent conductive layer consists principally of a metal selected from the group consisting of sublimable and non-sublimable metals, and wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semi-conductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the non-transparent conductive layer member to irradiation one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer member, thereby forming the non-transparent conductive layer which has a thickness of 2 μm or less and consists principally of the sublimable or non-sublimable metal on the substrate or the non-single-crystal semi-conductor layer member.

Claim 5

A method for the manufacture of an electronic device which is provided with at least a first laminate member of transparent and non-transparent conductive layers, comprising the steps of: forming a second laminate member of transparent and non-transparent conductive layer member on a substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators or on a non-single-crystal semi-conductor layer member, wherein the transparent conductive layer of the second laminate member consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides wherein the second laminate member has a thickness of 2 μm or less, wherein the nontransparent conductive layer of the second laminate member consists principally of a metal selected from the group consisting of sublimable metals and non-sublimable metals, wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semiconductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the second laminate member to irradiation by one or more pulses laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the transparent and non-transparent layers of the second laminate member, thereby forming the first laminate member which has a thickness of 2 μm or less, wherein the transparent conductive layer of the first laminate member consists principally of the sublimable metallic oxide or nitride, and wherein the non-transparent conductive layer for the first laminate member consists principally of the sublimable or nonsublimable metal on the substrate or the non-single-crystal semi-conductive layer member.

Claim 6

A method for the manufacture of an electronic device which is provided with at least a first laminate member of transparent and non-transparent conductive layers, comprising the steps of: forming a second laminate member of transparent and non-transparent conductive layer member on a substrate having a surface of an insulator selected from the group consisting of organic and inorganic insulators or on a non-single-crystal semi-conductor layer member, wherein the transparent conductive layer of the second laminate member consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides wherein the second laminate member has a thickness of 2 μm or less, wherein the nontransparent conductive layer of the second laminate member consists principally of a metal selected from the group consisting of sublimable metals and non-sublimable metals, wherein the non-single-crystal semi-conductor layer member consists principally of a sublimable semiconductor which includes a dangling bond neutralizer selected from the group consisting of hydrogen and halogen; and exposing the second laminate member to irradiation by one or more pulses laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the transparent and non-transparent layers of the second laminate member, thereby forming the first laminate member which has a thickness of 2 μm or less, wherein the transparent conductive layer of the first laminate member consists principally of the sublimable metallic oxide or nitride, and wherein the non-transparent conductive layer for the first laminate member consists principally of the sublimable or nonsublimable metal on the substrate or the non-single-crystal semi-conductive layer member.

Claim 7

A method for the manufacture of an electronic device which is provided with at least a non-single-crystal semiconductor layer, comprising the steps of: forming a non-single-crystal semiconductor layer member on a transparent or non-transparent conductive layer or on a laminate member of transparent and non-transparent conductive layers, wherein the non-single-crystal semiconductor layer has a thickness of 2μm or less, wherein the non-single-crystal semiconductor layer consists principally of a sublimable semiconductor which includes dangling bond neutralizer selected from the group consisting of hydrogen and halogen, wherein the transparent conductive layer of the second laminate member consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides, wherein the second laminate member has a thickness of two μm or less, and wherein the non-transparent conductive layer of the second laminate member consists principally of a metal selected from the group consisting of sublimable metals and non-sublimable metals; and exposing the non-single-crystal semiconductor layer member to irradiation by one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the non-single-crystal semiconductive layer member, thereby forming the non-single-crystal semiconductor layer which has a thickness of 2 μm or less and consists principally of the sublimable semi-conductor on the transparent or non-transparent conductive layer or the laminate member.

Claim 8

A method for the manufacture of an electronic device which is provided with at least a non-single-crystal semiconductor layer, comprising the steps of: forming a non-single-crystal semiconductor layer member on a transparent or non-transparent conductive layer or on a laminate member of transparent and non-transparent conductive layers, wherein the non-single-crystal semiconductor layer has a thickness of 2μm or less, wherein the non-single-crystal semiconductor layer consists principally of a sublimable semiconductor which includes dangling bond neutralizer selected from the group consisting of hydrogen and halogen, wherein the transparent conductive layer of the second laminate member consists principally of a sublimable metallic compound selected from the group consisting of oxides and nitrides, wherein the second laminate member has a thickness of two μm or less, and wherein the non-transparent conductive layer of the second laminate member consists principally of a metal selected from the group consisting of sublimable metals and non-sublimable metals; and exposing the non-single-crystal semiconductor layer member to irradiation by one or more pulsed laser beams which are squeezed in only one direction after expansion in cross-section and have a wave length of 400 nm or less and optical energy greater than the optical energy band gap of the non-single-crystal semiconductive layer member, thereby forming the non-single-crystal semiconductor layer which has a thickness of 2 μm or less and consists principally of the sublimable semi-conductor on the transparent or non-transparent conductive layer or the laminate member.

Claim 17

The method as defined by claims 1, 2, 3 or 4 in which said sublimable semi-conductor material is selected from the group consisting of Si, Si x Ge 1-x (where 0<x<0.5), Si x C 1-x (where 0<x<1), Si 3 N 4-x (where 0<x<2), and SiO 2-x (where 0<x<1).

Claim 18

The method as defined by claims 2 or 3 in which said sublimable metal is selected from the group consisting of Cr, Cr-Cu alloy, and Cr-N alloy and in which said non-sublimable metal is selected from the group consisting of Al, Cu and Ag.