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US4711989A Expired / Lapsed US ⏱️ 0.0 years remaining

Diffusion furnace multizone temperature control

Assignee: Aviza Technology Inc
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Filing: 1986-05-19
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Granted: 1987-12-08
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Expires: 2006-05-19
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Abstract

Abstract There is a substantial heat loss and drop in temperature in a hot-wall diffusion tube when a batch of wafers at room temperature is loaded into the tube. The temperature of the atmosphere in a zone in the tube is quickly recovered by sensing both the temperature of the tube atmosphere and the temperature of a heating element surrounding the zone with thermocouples, mixing the signals of the thermocouples to produce a ratio average signal and then controlling the heat input to the heating elements in response to the ratio average of the sensed temperature.

Inventors

  • 👤 Chorng-Tao Yu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 04:48
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/12; C30B31/18

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 133 words
A method for recovering the atmospheric temperature in a multi-zone diffusion tube containing a freshly loaded batch of wafers, said tube having resistance heating elements disposed around its periphery, comprising the steps of: (a) providing at least one central zone between a load end zone and a source end zone; (b) loading a batch of wafers into the central zone; (c) heating the tube atmosphere toward a predetermined temperature; (d) sensing the temperature of a heating element in the central zone; (e) sensing the temperature of the tube atmosphere in the central zone; (f) controlling the heat input to the heating elements disposed around the central zone in response to a ratio average of the sensed temperatures of the heating element in the central zone and the tube atmosphere in the central zone.
Claim 2
Independent Claim 133 words
A method for recovering the atmospheric temperature in a multi-zone diffusion tube containing a freshly loaded batch of wafers, said tube having resistance heating elements disposed around its periphery, comprising the steps of: (a) providing at least one central zone between a load end zone and a source end zone; (b) loading a batch of wafers into the central zone; (c) heating the tube atmosphere toward a predetermined temperature; (d) sensing the temperature of a heating element in the central zone; (e) sensing the temperature of the tube atmosphere in the central zone; (f) controlling the heat input to the heating elements disposed around the central zone in response to a ratio average of the sensed temperatures of the heating element in the central zone and the tube atmosphere in the central zone.
Claim 3
Dependent Claim 81 words
The method of claim 1 comprising the additional steps of sensing the temperature of a heating element in each of the two end zones of the tube; and controlling the temperature in each end zone in response to the sensed temperature of the heating element in the end zone while the temperature of the central zone is controlled in response to a ratio average of the atmosphere temperature in the zone and the temperature of a heating element in the zone.
Claim 4
Dependent Claim 14 words
The method of claim 1 wherein the tube atmosphere is heated to about 600°.
Claim 5
Dependent Claim 15 words
The method of claim 1 wherein the tube atmosphere is heated to about 450° C.
Claim 6
Dependent Claim 15 words
The method of claim 1 wherein the tube atmosphere is heated to about 250° C.
Claim 7
Independent Claim 152 words
A method of controlling the temperature of the atmosphere in a semiconductor wafer diffusion tube having resistance heating elements disposed about its periphery, comprising the steps of: (a) providing at least one central zone between a load end zone and a source end zone; (b) loading a batch of wafers into the central zone; (c) heating the tube atmosphere toward a predetermined temperature; (d) sensing the temperature of a heating element in the central zone; (e) sensing the temperature of the tube atmosphere in the central zone; (f) controlling the heat input to the heating elements disposed around the central zone in response to a ratio average of the sensed temperatures of the heating element in the central zone and the tube atmosphere in the central zone; and (g) maintaining the temperature of the tube atmosphere in the central zone to within ±1° C. of the set point while processing the wafers.
Claim 8
Independent Claim 152 words
A method of controlling the temperature of the atmosphere in a semiconductor wafer diffusion tube having resistance heating elements disposed about its periphery, comprising the steps of: (a) providing at least one central zone between a load end zone and a source end zone; (b) loading a batch of wafers into the central zone; (c) heating the tube atmosphere toward a predetermined temperature; (d) sensing the temperature of a heating element in the central zone; (e) sensing the temperature of the tube atmosphere in the central zone; (f) controlling the heat input to the heating elements disposed around the central zone in response to a ratio average of the sensed temperatures of the heating element in the central zone and the tube atmosphere in the central zone; and (g) maintaining the temperature of the tube atmosphere in the central zone to within ±1° C. of the set point while processing the wafers.

References Cited (Backward Citations)

US2422734A Cited
US2391195A Cited
US2843714A Cited
US3385921A Cited
JPS5274138A Cited
US4243441A Cited
US4348580A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-12-07 1991-06-08 1991-12-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-12-07 1995-06-08 1995-12-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-12-07 1999-06-08 1999-12-08 $7700.00 Window Closed / Lapsed

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