Patent US4710795A successfully refreshed from Google Patents.
US4710795A
Expired / Lapsed
US
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Semiconductor power module
Assignee: BBC Brown Boveri AG Germany
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Filing: 1985-02-25
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Granted: 1987-12-01
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Expires: 2005-02-25
Abstract
Abstract A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between each two respective substrates and contacted by the metallizations above and below the component, the substrate above the component having at least one hole formed therein above the component for accommodting control connections to the component.
Inventors
- 👤 Georg Nippert
- 👤 Berthold Hahn
- 👤 Jens Gobrecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:12
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/611; H10W70/62; H10W70/65; H10W70/658; H10W90/00; H10W90/401; H10W72/00; H10W72/071; H10W72/073; H10W72/07321; H10W72/07327; H10W72/07331; H10W72/07336; H10W72/075; H10W72/07521; H10W72/07551; H10W72/07553; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/537; H10W72/541; H10W72/5434; H10W72/547; H10W72/90; H10W72/951; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
137 words
Semiconductor power module, comprising at least one upper substrate and at least one lower substrate, said substrates being mutually parallel and formed of ceramic, each substrate having upper and lower sides, metallizations disposed on at least said upper and lower sides of said upper substrate and said upper side of said lower substrate, at least one controlled semiconductor power component disposed between each two respective substrates and electrically contacted by said metallizations disposed on said lower side of said upper substrate and on said upper side of said lower substrate, defining a substrate above said component and a substrate below said component, said substrate above said component having at least one hole formed therein above said component for accommodating control connections to said component, said metallization disposed on said upper side of said upper substrate being structured.
Claim 2
Dependent Claim
137 words
Semiconductor power module, comprising at least one upper substrate and at least one lower substrate, said substrates being mutually parallel and formed of ceramic, each substrate having upper and lower sides, metallizations disposed on at least said upper and lower sides of said upper substrate and said upper side of said lower substrate, at least one controlled semiconductor power component disposed between each two respective substrates and electrically contacted by said metallizations disposed on said lower side of said upper substrate and on said upper side of said lower substrate, defining a substrate above said component and a substrate below said component, said substrate above said component having at least one hole formed therein above said component for accommodating control connections to said component, said metallization disposed on said upper side of said upper substrate being structured.
Claim 3
Dependent Claim
22 words
Semiconductor power module according to claim 1 including a housing enclosing said substrates and casting compound at least partially filling said housing.
Claim 4
Dependent Claim
23 words
Semiconductor power module according to claim 1, wherein said metallization on one side of said lower substrate is structured to form conductor runs.
Claim 5
Dependent Claim
39 words
Semiconductor power module according to claim 1, wherein said sides of said substrates define conductor run planes, said metallizations are conductor runs disposed on two of said planes facing each other, and including contact posts interconnecting said conductor runs.
Claim 6
Dependent Claim
20 words
Semiconductor power module according to claim 1, wherein said metallization is structured and in the form of auxiliary control circuits.
Claim 7
Dependent Claim
51 words
Semiconductor power module according to claim 1, wherein said at least one component disposed between each two respective substrates is in the form of at least two components of different heights, and including compensating pieces disposed between at least one of said components and said substrates for compensating said different heights.
Claim 8
Dependent Claim
21 words
Semiconductor power module according to claim 1, including compensating pieces disposed between said component and said substrates for compensating mechanical stresses.
Claim 9
Dependent Claim
29 words
Semiconductor power module according to claim 1, including electrically insulating, heat resistant centering pins disposed in said at least one hole for positioning said component before and during soldering.
Claim 10
Dependent Claim
42 words
Semiconductor power module according to claim 1, including centering sleeves disposed in said at least one hole formed in said substrate above said component and in an opening formed in one of said compensating pieces above said component for positioning said component.
Claim 11
Dependent Claim
103 words
Semiconductor power module according to claim 1, wherein said component includes a gate terminal, said substrates are cover and base plates, said sides of said substrates define conductor run planes, said metallizations are conductor runs disposed on at least some of said planes, and including auxiliary control circuits disposed on one of said conductor runs on said cover plate facing away from said component, and a sleeve for positioning said component disposed in said hole having a rim with metallizations connecting conductor runs on both sides of said cover plate and, connecting said gate terminal to said conductor run for said auxiliary circuits.
Claim 12
Dependent Claim
42 words
Semiconductor power module according to claim 4, wherein said contact posts have contact surfaces contacting said conductor runs at given locations of said conductor runs fitted to said contact surfaces, said posts being held at said locations by capillary force for soldering.
Claim 13
Dependent Claim
67 words
Semiconductor power module according to claim 1, wherein said component includes a gate terminal, said sides of said substrates define conductor run planes, said metallizations are conductor runs disposed on said planes, and including auxiliary circuits disposed on one of said conductor runs, and presoldered contact wires passing through said hole and connecting said gate terminal to said conductor run on which said auxiliary circuits are disposed.
Claim 14
Dependent Claim
25 words
Semiconductor power module according to claim 1, wherein said substrates are base and cover plates, and said base plate is larger than said cover plate.
Claim 15
Dependent Claim
18 words
Semiconductor power module according to claim 1, wherein said metallizations are disposed on said substrates by direct bonding.
Claim 16
Dependent Claim
24 words
Semiconductor power module according to claim 1, wherein said substrates are base and cover plates, and including a heat sink contacting said base plate.
Claim 17
Dependent Claim
22 words
Semiconductor power module according to claim 1, including a heat sink contacting the upper surface of said substrate disposed above said component.
Claim 18
Dependent Claim
15 words
Semiconductor power module according to claim 1, including contact pins emerging laterally to the surroundings.
Claim 19
Dependent Claim
17 words
Semiconductor power module according to claim 1, including a built-in integrated circuit with addressing and control functions.
Claim 20
Dependent Claim
32 words
Semiconductor power module according to claim 1, wherein said substrates are in the form of an upper substrate and a base plate respectively forming a cover and a bottom of a housing.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |