US4710264A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing a semiconductor arrangement
Assignee: Telefunken Electronic GmbH
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Filing: 1986-11-17
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Granted: 1987-12-01
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Expires: 2006-11-17
Abstract
Abstract In a process for manufacturing a semiconductor arrangement, wherein an uneven surface of the semiconductor arrangement is smoothened, there is produced on the uneven surface an insulating layer of such thickness that the insulating layer produced on the surface exhibits an even surface. The insulating layer is then partially removed again.
Inventors
- 👤 Eckehard Waschler
- 👤 Hermann Clauss
- 👤 Heinz-Achim Hefner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:16
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/68; H10P14/683; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A process for obtaining a planar-surface semiconductor consisting essentially of forming an insulating layer on an uneven semiconductor surface, the insulating layer being planar and having a depth substantially greater than the thickest portion of the uneven surface to build an extra depth; and removing a portion of the insulating layer over the entire surface to obtain a thinner insulating layer having a substantially planar surface of a standard thickness.
Claim 2
Dependent Claim
70 words
A process for obtaining a planar-surface semiconductor consisting essentially of forming an insulating layer on an uneven semiconductor surface, the insulating layer being planar and having a depth substantially greater than the thickest portion of the uneven surface to build an extra depth; and removing a portion of the insulating layer over the entire surface to obtain a thinner insulating layer having a substantially planar surface of a standard thickness.
Claim 3
Dependent Claim
24 words
The process of claim 1, wherein the steps of forming an insulating layer and removing a portion thereof are conducted more than one time.
Claim 4
Dependent Claim
31 words
The process of claim 1, wherein if the surface of the insulating layer is rough after removing a portion thereof, a second insulating layer is formed onto the first insulating layer.
Claim 5
Dependent Claim
33 words
A process according to claim 3, wherein the total thickness of the first and second insulating layers is such that the first and second insulating layers together exhibit a standard insulating layer thickness.
Claim 6
Dependent Claim
27 words
The process of claim 1, further comprising depositing an inorganic insulating layer directly onto the semiconductor body, and forming the insulating layer on said inorganic insulating layer.
Claim 7
Dependent Claim
20 words
The process of claim 5, wherein the inorganic insulating layer is a silicon oxide layer or a silicon nitride layer.
Claim 8
Dependent Claim
13 words
The process of claim 1, wherein the insulating layer comprises an organic compound.
Claim 9
Dependent Claim
12 words
The process of claim 7, wherein the organic compound is a polyimide.
Claim 10
Dependent Claim
13 words
The process of claim 1, wherein the insulating layer is formed by centrifugation.
References Cited (Backward Citations)
DE2634095A1
Cited
DE3116406A1
Cited
US4377438A
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US4566940A
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GB2119166A
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DE3234907A1
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US4568632A
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US4601781A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |